All MOSFET. AM40N10-30I Datasheet

 

AM40N10-30I MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM40N10-30I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 31 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO-251

 AM40N10-30I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM40N10-30I Datasheet (PDF)

 ..1. Size:303K  analog power
am40n10-30i.pdf

AM40N10-30I
AM40N10-30I

Analog Power AM40N10-30IN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)36 @ VGS = 10V31 Low thermal impedance 10042 @ VGS = 4.5V29 Fast switching speed Typical Applications: TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

 4.1. Size:291K  analog power
am40n10-30d.pdf

AM40N10-30I
AM40N10-30I

Analog Power AM40N10-30DN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)36 @ VGS = 10V26 Low thermal impedance 10042 @ VGS = 4.5V24 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost co

 6.1. Size:61K  analog power
am40n10-28d.pdf

AM40N10-30I
AM40N10-30I

Analog Power AM40N10-28DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 28 @ VGS = 10V 35converters and power management in portable and 10030 @ VGS = 4.5V 33bat

 9.1. Size:297K  analog power
am40n04-30d.pdf

AM40N10-30I
AM40N10-30I

Analog Power AM40N04-30DN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 10V33 Low thermal impedance 4042 @ VGS = 4.5V29 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.2. Size:289K  analog power
am40n20-180p.pdf

AM40N10-30I
AM40N10-30I

Analog Power AM40N20-180PN-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)180 @ VGS = 10V Low thermal impedance 20034a340 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

 9.3. Size:291K  analog power
am40n08-30d.pdf

AM40N10-30I
AM40N10-30I

Analog Power AM40N08-30DN-Channel 80-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)26 @ VGS = 10V36 Low thermal impedance 8036 @ VGS = 4.5V31 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.4. Size:74K  analog power
am40n06-28d.pdf

AM40N10-30I
AM40N10-30I

Analog Power AM40N06-28DN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 28 @ VGS = 10V 35converters and power management in portable and 6030 @ VGS = 4.5V 34batte

 9.5. Size:276K  analog power
am40n04-30de.pdf

AM40N10-30I
AM40N10-30I

Analog Power AM40N04-30DEN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 32 @ VGS = 10V 33converters and power management in portable and 4042 @ VGS = 4.5V 29batt

 9.6. Size:299K  analog power
am40n04-20d.pdf

AM40N10-30I
AM40N10-30I

Analog Power AM40N04-20DN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)22 @ VGS = 10V39 Low thermal impedance 4027 @ VGS = 4.5V36 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.7. Size:2118K  cn vbsemi
am40n04-20d.pdf

AM40N10-30I
AM40N10-30I

AM40N04-20Dwww.VBsemi.twN-Channel 4 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.013 at VGS = 10 V 5540 42 nC0.018 at VGS = 4.5 V 45APPLICATIONSD OR-ingTO-252 Server DC/DCGDG SSTop ViewN-Channel MOSFET

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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