All MOSFET. AM40P02-20D Datasheet

 

AM40P02-20D Datasheet and Replacement


   Type Designator: AM40P02-20D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 41 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 12 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-252
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AM40P02-20D Datasheet (PDF)

 ..1. Size:139K  analog power
am40p02-20d.pdf pdf_icon

AM40P02-20D

Analog Power AM40P02-20DP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making VDS (V) rDS(on) m() ID (A)this device ideal for use in power management 20 @ VGS = -4.5V 41circuitry. Typical applications are PWMDC-DC -20converters, power manageme

 8.1. Size:117K  analog power
am40p06-135p.pdf pdf_icon

AM40P02-20D

Analog Power AM40P06-135PP-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 135 @ VGS = -10Vconverters and power management in portable and -60-39a150 @ VGS = -4.5V

 8.2. Size:233K  analog power
am40p04-20de.pdf pdf_icon

AM40P02-20D

Analog Power AM40P04-20DEP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 30 @ VGS = -10V 36converters and power management in portable and -40battery-powered prod

 8.3. Size:85K  analog power
am40p03-34d.pdf pdf_icon

AM40P02-20D

Analog Power AM40P03-34DP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 34 @ VGS = -10V 32converters and power management in portable and -30battery-powered produ

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HGA082N10M | IRFI734GPBF | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

Keywords - AM40P02-20D MOSFET datasheet

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