AM40P03-34D
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM40P03-34D
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 32
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 5
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034
Ohm
Package:
TO-252
AM40P03-34D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM40P03-34D
Datasheet (PDF)
..1. Size:85K analog power
am40p03-34d.pdf
Analog Power AM40P03-34DP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 34 @ VGS = -10V 32converters and power management in portable and -30battery-powered produ
6.1. Size:308K analog power
am40p03-20i.pdf
Analog Power AM40P03-20IP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)20 @ VGS = -10V -41 Low thermal impedance -3035 @ VGS = -4.5V -31 Fast switching speed Typical Applications: TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO
6.2. Size:282K analog power
am40p03-20d.pdf
Analog Power AM40P03-20DP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)20 @ VGS = -10V -41 Low thermal impedance -3035 @ VGS = -4.5V -31 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI
6.3. Size:1449K cn vbsemi
am40p03-20d.pdf
AM40P03-20Dwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFET
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