2SK2080 Spec and Replacement
Type Designator: 2SK2080
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 80
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 15
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 100
nS
Cossⓘ -
Output Capacitance: 270
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55
Ohm
Package:
TO-3PML
2SK2080 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2080 Specs
..1. Size:250K inchange semiconductor
2sk2080.pdf 
isc N-Channel MOSFET Transistor 2SK2080 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC Converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒
0.2. Size:222K inchange semiconductor
2sk2080-01.pdf 
isc N-Channel MOSFET Transistor 2SK2080-01 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC Converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
8.1. Size:85K 1
2sk2084stl-e.pdf 
2SK2084(L), 2SK2084(S) Silicon N Channel MOS FET REJ03G0995-0200 (Previous ADE-208-1342) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC - DC converter Outline RENESAS Package co... See More ⇒
8.2. Size:305K toshiba
2sk208.pdf 
2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Unit mm Condenser Microphone Applications High breakdown voltage VGDS = -50 V High input impedance I = -1.0 nA (max) (V = -30 V) GSS GS Low noise NF = 0.5dB (typ.) (R = 100 k , f = 120 Hz) G Small package. Maximum Ratings (Ta = =... See More ⇒
8.3. Size:119K sanyo
2sk2083.pdf 
Ordering number ENN4617 N-Channel Silicon MOSFET 2SK2083 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2090A Micaless package facilitating mounting. [2SK2083] 10.2 4.5 1.3 1 2 3 0 to 0.3 0.8 1.2 0.4 2.55 2.55 1 Gate 2 Drain 3 Source 2.55 2.55 SANYO SMP-FD Specifications Absol... See More ⇒
8.4. Size:88K renesas
2sk2084.pdf 
2SK2084(L), 2SK2084(S) Silicon N Channel MOS FET REJ03G0995-0200 (Previous ADE-208-1342) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC - DC converter Outline RENESAS Package co... See More ⇒
8.5. Size:101K renesas
rej03g0995 2sk2084lsds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.6. Size:99K renesas
2sk2084s-l.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.7. Size:219K fuji
2sk2082-01.pdf 
N-channel MOS-FET 2SK2082-01 FAP-IIA Series 900V 1,4 9A 150W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv... See More ⇒
8.8. Size:218K fuji
2sk2081-01.pdf 
FUJI POWER MOSFET 2SK2081-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC General purpose power amplifier EIAJ SC-65 Equivalent circuit schem... See More ⇒
8.10. Size:222K inchange semiconductor
2sk2082-01.pdf 
isc N-Channel MOSFET Transistor 2SK2082-01 DESCRIPTION Drain Current I = 9A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC Converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
8.11. Size:222K inchange semiconductor
2sk2081-01.pdf 
isc N-Channel MOSFET Transistor 2SK2081-01 DESCRIPTION Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC Converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
Detailed specifications: ITF87012SVT
, ITF87052SVT
, ITF87056DQT
, ITF87068SQT
, ITF87072DK8T
, 12N65KL-TF
, 20N03
, 2N0609
, NCEP15T14
, 2SK2652
, 2SK2654
, 2SK3530
, 2SK3681
, 3N150S
, 80N08A
, AOB12N65
, AOB2144L
.
Keywords - 2SK2080 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.