All MOSFET. AM4920 Datasheet

 

AM4920 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM4920
   Marking Code: M8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 38.7 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP-8

 AM4920 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM4920 Datasheet (PDF)

 ..1. Size:620K  ait semi
am4920.pdf

AM4920
AM4920

AiT Semiconductor Inc. AM4920 www.ait-ic.com MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4920 is the Dual N-Channel logic 30V / 7.8A, R =16m (typ.)@V =10V DS(ON) GSenhancement mode power field effect transistor is 30V / 5.8A, R =28m (typ.)@V =4.5V DS(ON) GSproduced using high cell density. Advanced trench Super high density cell design f

 0.1. Size:336K  analog power
am4920n.pdf

AM4920
AM4920

Analog Power AM4920NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)34 @ VGS = 10V6.5 Low thermal impedance 3041 @ VGS = 4.5V5.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

 9.1. Size:160K  analog power
am4922n.pdf

AM4920
AM4920

Analog Power AM4922NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m()ID (A)minimal power loss and conserves energy, making 22 @ VGS = 4.5V 7.8this device ideal for use in power management 20circuitry. Typical applications are PWMDC-DC 28 @ VGS = 2.5V 7.0converters, p

 9.2. Size:159K  analog power
am4924n.pdf

AM4920
AM4920

Analog Power AM4924NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat 11 @ VGS = 4.5V 11dissipation. Typical applications are DC-DC 20converters and power management in portable and 14 @ VGS = 2.5V 10battery-p

 9.3. Size:129K  analog power
am4926n.pdf

AM4920
AM4920

Analog Power AM4926NDual N-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARYminimal power loss and conserves energy, making VDS (V) rDS(on) m()ID (A)this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 58 @ VGS = 4.5V 5.0converters, power management in

 9.4. Size:119K  analog power
am4929p.pdf

AM4920
AM4920

Analog Power AM4929PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 52 @ VGS = -4.5V -4.9converters and power management in portable and -2089 @ VGS = -2.5V -4.0

 9.5. Size:851K  cn vbsemi
am4929p-t1.pdf

AM4920
AM4920

AM4929P-T1www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top V

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