AM4926N Specs and Replacement

Type Designator: AM4926N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: SO-8

AM4926N substitution

- MOSFET ⓘ Cross-Reference Search

 

AM4926N datasheet

 ..1. Size:129K  analog power
am4926n.pdf pdf_icon

AM4926N

Analog Power AM4926N Dual N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) m( )ID (A) this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 58 @ VGS = 4.5V 5.0 converters, power management in... See More ⇒

 9.1. Size:336K  analog power
am4920n.pdf pdf_icon

AM4926N

Analog Power AM4920N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 34 @ VGS = 10V 6.5 Low thermal impedance 30 41 @ VGS = 4.5V 5.9 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R... See More ⇒

 9.2. Size:160K  analog power
am4922n.pdf pdf_icon

AM4926N

Analog Power AM4922N N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making 22 @ VGS = 4.5V 7.8 this device ideal for use in power management 20 circuitry. Typical applications are PWMDC-DC 28 @ VGS = 2.5V 7.0 converters, p... See More ⇒

 9.3. Size:159K  analog power
am4924n.pdf pdf_icon

AM4926N

Analog Power AM4924N N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat 11 @ VGS = 4.5V 11 dissipation. Typical applications are DC-DC 20 converters and power management in portable and 14 @ VGS = 2.5V 10 battery-p... See More ⇒

Detailed specifications: AM4910N, AM4915P, AM4917P, AM4919P, AM4920, AM4920N, AM4922N, AM4924N, IRF1407, AM4929P, AM4930N, AM4932N, AM4934N, AM4935P, AM4936N, AM4940N, AM4942N

Keywords - AM4926N MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs