AM50P02-09D MOSFET. Datasheet pdf. Equivalent
Type Designator: AM50P02-09D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 66 nC
trⓘ - Rise Time: 12 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-252
AM50P02-09D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM50P02-09D Datasheet (PDF)
am50p02-09d.pdf
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am50p02-16d.pdf
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am50p03-09d.pdf
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Analog Power AM50P04-16PCFMP-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)16 @ VGS = -10V -50 Low thermal impedance -4028 @ VGS = -4.5V -38 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE M
am50p04-20d.pdf
Analog Power AM50P04-20DP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 20 @ VGS = -10V 41converters and power management in portable and -40battery-powered produ
am50p06-15d.pdf
Analog Power AM50P06-15DP-Channel 60-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)17 @ VGS = -10V -44 Low thermal impedance -6023 @ VGS = -4.5V -38 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost c
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