2SJ462 Datasheet and Replacement
Type Designator: 2SJ462
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 225 nS
Cossⓘ - Output Capacitance: 835 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: MP2
2SJ462 substitution
2SJ462 Datasheet (PDF)
2sj462.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ462P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR HIGH SPEED SWITCHINGDESCRIPTION Package Drawings (unit : mm)The 2SJ462 is a switching device which can be driven directly5.7 0.1by an IC operating at 3 V.1.5 0.12.0 0.2The 2SJ462 features a low on-state resistance and can bedriven by a low voltage power source, so it is suitable for
2sj465.pdf

2SJ465 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ465 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 2.5 V gate drive Low drain-source ON resistance : R = 0.54 (typ.) DS (ON) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = -100 A (max) DSS (V = -16 V) DS Enhance
Datasheet: 2SJ424 , 2SJ425 , 2SJ44 , 2SJ448 , 2SJ449 , 2SJ45 , 2SJ460 , 2SJ461 , 2N60 , 2SJ463 , 2SJ471 , 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 , 2SJ496 , 2SJ504 .
Keywords - 2SJ462 MOSFET datasheet
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