AM6415 Datasheet and Replacement
Type Designator: AM6415
Marking Code: E6
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 4.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 5.2 nC
tr ⓘ - Rise Time: 13.2 nS
Cossⓘ - Output Capacitance: 72 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.071 Ohm
Package: SOT-26
AM6415 substitution
AM6415 Datasheet (PDF)
am6415.pdf

AiT Semiconductor Inc. AM6415 www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM6415 is available in a SOT-26 package. -20V/-4.4A, R = 71m(max.) @ V = -4.5V DS(ON) GSR = 104m(max.) @ V = -2.7V DS(ON) GSR = 110m(max.) @ V = -2.5V DS(ON) GSR = 193m(max.) @ V = -1.8V DS(ON) GS Super High Dense Cell Design Reliable and Rugg
am6411p.pdf

Analog Power AM6411PP-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYVDS (V) rDS(on) m()ID (A)These miniature surface mount MOSFETs utilize a high cell density trench process to provide low 13 @ VGS = -4.5V -9.5rDS(on) and to ensure minimal power loss and heat -20 19 @ VGS = -2.5V -7.9dissipation. Typical applications are DC-DC converters and power management in portable and 35
Datasheet: AM60N04-12D , AM60N10-13D , AM60N10-70P , AM60N10-70PCFM , AM60P04-10D , AM6378 , AM6401 , AM6411P , IRFP250N , AM6441P , AM6520C , AM6544C , AM6602 , AM6612N , AM6612NE , AM6802 , AM6920NH .
History: AP0504GH-HF | SVS70R900DE3TR
Keywords - AM6415 MOSFET datasheet
AM6415 cross reference
AM6415 equivalent finder
AM6415 lookup
AM6415 substitution
AM6415 replacement
History: AP0504GH-HF | SVS70R900DE3TR



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