All MOSFET. AM6415 Datasheet

 

AM6415 Datasheet and Replacement


   Type Designator: AM6415
   Marking Code: E6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.2 nC
   tr ⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.071 Ohm
   Package: SOT-26
 

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AM6415 Datasheet (PDF)

 ..1. Size:559K  ait semi
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AM6415

AiT Semiconductor Inc. AM6415 www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM6415 is available in a SOT-26 package. -20V/-4.4A, R = 71m(max.) @ V = -4.5V DS(ON) GSR = 104m(max.) @ V = -2.7V DS(ON) GSR = 110m(max.) @ V = -2.5V DS(ON) GSR = 193m(max.) @ V = -1.8V DS(ON) GS Super High Dense Cell Design Reliable and Rugg

 9.1. Size:166K  analog power
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AM6415

Analog Power AM6411PP-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYVDS (V) rDS(on) m()ID (A)These miniature surface mount MOSFETs utilize a high cell density trench process to provide low 13 @ VGS = -4.5V -9.5rDS(on) and to ensure minimal power loss and heat -20 19 @ VGS = -2.5V -7.9dissipation. Typical applications are DC-DC converters and power management in portable and 35

Datasheet: AM60N04-12D , AM60N10-13D , AM60N10-70P , AM60N10-70PCFM , AM60P04-10D , AM6378 , AM6401 , AM6411P , IRFP250N , AM6441P , AM6520C , AM6544C , AM6602 , AM6612N , AM6612NE , AM6802 , AM6920NH .

History: AP0504GH-HF | SVS70R900DE3TR

Keywords - AM6415 MOSFET datasheet

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