All MOSFET. AM6415 Datasheet

 

AM6415 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM6415
   Marking Code: E6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.2 nC
   trⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.071 Ohm
   Package: SOT-26

 AM6415 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM6415 Datasheet (PDF)

 ..1. Size:559K  ait semi
 am6415.pdf

AM6415 AM6415

AiT Semiconductor Inc. AM6415 www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM6415 is available in a SOT-26 package. -20V/-4.4A, R = 71m(max.) @ V = -4.5V DS(ON) GSR = 104m(max.) @ V = -2.7V DS(ON) GSR = 110m(max.) @ V = -2.5V DS(ON) GSR = 193m(max.) @ V = -1.8V DS(ON) GS Super High Dense Cell Design Reliable and Rugg

 9.1. Size:166K  analog power
 am6411p.pdf

AM6415 AM6415

Analog Power AM6411PP-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYVDS (V) rDS(on) m()ID (A)These miniature surface mount MOSFETs utilize a high cell density trench process to provide low 13 @ VGS = -4.5V -9.5rDS(on) and to ensure minimal power loss and heat -20 19 @ VGS = -2.5V -7.9dissipation. Typical applications are DC-DC converters and power management in portable and 35

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top