AM6968NE Datasheet and Replacement
Type Designator: AM6968NE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 72 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: TSSOP-8
AM6968NE substitution
AM6968NE Datasheet (PDF)
am6968ne.pdf

Analog Power AM6968NEDual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) (m) VDS (V) ID(A) Key Features:26 @ VGS = 4.5V 6.8 Low r trench technologyDS(on)35 @ VGS = 2.5V 20 5.8 Low thermal impedance46 @ VGS = 1.8V 4.7 Fast switching speedTypical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Unit
am6968nh.pdf

Analog Power AM6968NHDual N-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)24 @ VGS = 4.5V6.5 Low thermal impedance 2032 @ VGS = 2.5V5.6 Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATING
am6968n.pdf

Analog Power AM6968NDual N-Channel Logical Level MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.022 @ VGS = 4.5 V 6.8battery-powered pr
Datasheet: AM6802 , AM6920NH , AM6921P , AM6922NH , AM6923P , AM6924NHE , AM6930N , AM6968N , AO3400 , AM6968NH , AM7000N , AM7001P , AM70N03-04D , AM70N03-08D , AM70N04-06D , AM70N10-44P , AM70N15-40P .
History: STD60NF55LA | IXTT140N10P | SSF2341E | STD35NF3LLT4 | FQD4N50TM | CMPDM7003 | 2N4224
Keywords - AM6968NE MOSFET datasheet
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History: STD60NF55LA | IXTT140N10P | SSF2341E | STD35NF3LLT4 | FQD4N50TM | CMPDM7003 | 2N4224



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