All MOSFET. AM6968NH Datasheet

 

AM6968NH Datasheet and Replacement


   Type Designator: AM6968NH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 74 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TSSOP-8
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AM6968NH Datasheet (PDF)

 ..1. Size:293K  analog power
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AM6968NH

Analog Power AM6968NHDual N-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)24 @ VGS = 4.5V6.5 Low thermal impedance 2032 @ VGS = 2.5V5.6 Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATING

 7.1. Size:247K  analog power
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AM6968NH

Analog Power AM6968NEDual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) (m) VDS (V) ID(A) Key Features:26 @ VGS = 4.5V 6.8 Low r trench technologyDS(on)35 @ VGS = 2.5V 20 5.8 Low thermal impedance46 @ VGS = 1.8V 4.7 Fast switching speedTypical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Unit

 7.2. Size:137K  analog power
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AM6968NH

Analog Power AM6968NDual N-Channel Logical Level MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.022 @ VGS = 4.5 V 6.8battery-powered pr

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History: FSJ055R | IRFSL4410PBF | FQP3P20 | SSF5N80A | TDM3307A | NTD5406N | SSH7N90A

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