All MOSFET. AM7001P Datasheet

 

AM7001P Datasheet and Replacement


   Type Designator: AM7001P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: DFN3X3
      - MOSFET Cross-Reference Search

 

AM7001P Datasheet (PDF)

 ..1. Size:467K  analog power
 am7001p.pdf pdf_icon

AM7001P

Analog Power AM7001PP-Channel 200-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)900 @ VGS = -10V -1.6 Low thermal impedance -2001000 @ VGS = -5.5V -1.5 Fast switching speed Typical Applications: DFN3x3-8L PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters ABSOLU

 9.1. Size:446K  analog power
 am7000n.pdf pdf_icon

AM7001P

Analog Power AM7000NN-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)295 @ VGS = 10V3 Low thermal impedance 200340 @ VGS = 5.5V2.7 Fast switching speed Typical Applications: DFN3x3-8L PoE PSE and PD Circuits LED Inverter Circuits 48V-Input DC/DC Conversion Circuits ABSO

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History: WMM11N80M3 | AM2314NE | FDMS9620S | IRFI7536G | RFP2N10L

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