All MOSFET. IXFH12N100Q Datasheet

 

IXFH12N100Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFH12N100Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: TO247

 IXFH12N100Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH12N100Q Datasheet (PDF)

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Datasheet: 3N150S , 80N08A , AOB12N65 , AOB2144L , IXFH10N100 , IXFH10N90 , IXFH11N80 , IXFH12N100 , 2N60 , IXFH12N90 , IXFH12N90Q , IXFH13N50 , IXFH13N80 , IXFH13N80Q , IXFH14N100 , IXFH14N80 , IXFH15N100 .

 

 
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