AM7153P
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM7153P
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 1.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.6
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 30
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7
Ohm
Package:
DFN3X3
AM7153P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM7153P
Datasheet (PDF)
..1. Size:378K analog power
am7153p.pdf
Analog Power AM7153PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)1700 @ VGS = -10V -1.2 Low thermal impedance -1501800 @ VGS = -4.5V -1.1 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE
9.1. Size:289K analog power
am7150n.pdf
Analog Power AM7150NN-Channel 150-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)255 @ VGS = 10V3.6 Low thermal impedance 150290 @ VGS = 4.5V3.4 Fast switching speed Typical Applications: DFN3x3-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits A
9.2. Size:291K analog power
am7151p.pdf
Analog Power AM7151PP-Channel 150-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)500 @ VGS = -10V -2.2 Low thermal impedance -150530 @ VGS = -4.5V -2.1 Fast switching speed Typical Applications: DFN3x3-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
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