IXFH12N90 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFH12N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 123 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 315 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO247
IXFH12N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFH12N90 Datasheet (PDF)
ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETsIXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 1
ixfh12n90q ixft12n90q.pdf
IXFH 12N90Q VDSS = 900 VHiPerFETTMIXFT 12N90Q ID25 = 12 APower MOSFETsRDS(on) = 0.9 WQ ClassN-Channel Enhancement Modetrr 200 nsAvalanche RatedLow Qg, High dv/dtPreliminary data sheetSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 MW 900 VVGS Continuous 20 VVGSM Transient 30 VID25 TC
ixfh12n90p ixfv12n90p-s.pdf
Preliminary Technical InformationIXFH12N90P VDSS = 900VPolarTM Power MOSFETIXFV12N90P ID25 = 12AHiPerFETTM RDS(on) 900m IXFV12N90PS trr 300nsN-Channel Enhancement ModeAvalanche RatedPLUS220 (IXFV)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsDSVDSS TJ = 25C to 150C 900 VD (TAB)VDGR TJ
ixfp12n65x2m ixfp12n65x2 ixfa12n65x2 ixfh12n65x2.pdf
X2-Class HiPERFET VDSS = 650VIXFA12N65X2Power MOSFET ID25 = 12AIXFP12N65X2 RDS(on) 310m IXFH12N65X2N-Channel Enhancement ModeAvalanche RatedTO-263 (IXFA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXFP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVGSM Tr
ixfh10n100 ixfm10n100 ixfh12n100 ixfm12n100.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFH/IXFM 12 N100 1000 V 12 A 1.05 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M
ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETsIXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement ModeAvalanche RatedLow Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS
ixfh12n120p ixfv12n120p ixfv12n120ps.pdf
IXFH12N120P VDSS = 1200VPolarTM Power MOSFETIXFV12N120P ID25 = 12AHiPerFETTM RDS(on) 1.35 IXFV12N120PS N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic Diode PLUS220 (IXFV)GDSSymbol Test Conditions Maximum RatingsD (TAB)VDSS TJ = 25C to 150C 1200 VPLUS220SMD (IXFV_S)VDGR TJ = 25C to 1
Datasheet: 80N08A , AOB12N65 , AOB2144L , IXFH10N100 , IXFH10N90 , IXFH11N80 , IXFH12N100 , IXFH12N100Q , STF13NM60N , IXFH12N90Q , IXFH13N50 , IXFH13N80 , IXFH13N80Q , IXFH14N100 , IXFH14N80 , IXFH15N100 , IXFH15N60 .
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