AM7323P
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM7323P
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.3
V
|Id|ⓘ - Maximum Drain Current: 17
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 90
nC
trⓘ - Rise Time: 40
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
DFN3X3
AM7323P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM7323P
Datasheet (PDF)
..1. Size:72K analog power
am7323p.pdf
Analog Power AM7323PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 9 @ VGS = -4.5V -17converters and power management in portable and -2012 @ VGS = -2.5V -14batt
9.1. Size:74K analog power
am7320n.pdf
Analog Power AM7320NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 4.7 @ VGS = 4.5V 23converters and power management in portable and 207 @ VGS = 2.5V 19battery-
9.2. Size:120K analog power
am7321p.pdf
Analog Power AM7321PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 14 @ VGS = -4.5V -13converters and power management in portable and -2019 @ VGS = -2.5V -12bat
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