IRFH7914PBF Specs and Replacement
Type Designator: IRFH7914PBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 220 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
Package: PQFN
IRFH7914PBF substitution
- MOSFET ⓘ Cross-Reference Search
IRFH7914PBF datasheet
irfh7914pbf.pdf
IRFH7914PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power 8.7m 30V @VGS = 10V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-... See More ⇒
irfh7914trpbf.pdf
IRFH7914PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck Converters VDSS RDS(on) max Qg used for Notebook Processor Power 8.7m 30V @VGS = 10V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-... See More ⇒
irfh7911pbf.pdf
IRFH7911PbF HEXFET Power MOSFET Q1 Q2 VDS 30 30 V RDS(on) max 8.6 3.0 m (@VGS = 10V) Qg (typical) 8.3 34 nC ID 13 28 A (@TA = 25 C) Dual PQFN 5X6 mm Applications Control and synchronous MOSFET for buck converters Features and Benefits Benefits Features Increased power density Control and synchronous FET in one package (50% vs two PQFN 5x6) Low charge control MOSF... See More ⇒
irfh7934trpbf.pdf
IRFH7934PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power 30V 3.5m @VGS = 10V 20nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG PQFN 5X6 mm l L... See More ⇒
Detailed specifications: AM7332N, AM7333P, AM7333PE, AM7334N, AM7335P, AM7336N, AM7338N, IRFH7911PBF, 2N60, IRFH7921PBF, IRFH7932PBF, IRFH7934PBF, IRFH7936PBF, IRFH8201, IRFH8202, IRFH8303, IRFH8307
Keywords - IRFH7914PBF MOSFET specs
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