All MOSFET. IXFH13N80 Datasheet

 

IXFH13N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFH13N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 128 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO247

 IXFH13N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH13N80 Datasheet (PDF)

 ..2. Size:95K  ixys
ixfh11n80 ixfh13n80 ixfm11n80 ixfm13n80.pdf

IXFH13N80 IXFH13N80

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 11 N80 800 V 11 A 0.95 WPower MOSFETsIXFH/IXFM 13 N80 800 V 13 A 0.80 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 2

 0.1. Size:50K  ixys
ixfh13n80q ixft13n80q.pdf

IXFH13N80 IXFH13N80

IXFH 13N80Q VDSS = 800 VHiPerFETTMIXFT 13N80Q ID25 = 13 APower MOSFETsRDS(on) = 0.70 WQ ClassN-Channel Enhancement Mode trr 250 nsAvalanche Rated High dv/dt, Low QgPreliminary data sheetTO-268 (D3) (IXFT) Case StyleSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 VGVGS Continuous 20 V(TAB)SVGSM

 7.1. Size:179K  ixys
ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf

IXFH13N80 IXFH13N80

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETsIXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 1

 7.2. Size:82K  ixys
ixfh13n50 ixfm13n50.pdf

IXFH13N80 IXFH13N80

HiPerFETTM IXFH 13 N50 VDSS = 500 VPower MOSFETs IXFM 13 N50 ID (cont) = 13 ARDS(on) = 0.4 WN-Channel Enhancement Modetrr 250 nsHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C13 ATO-204 AA

Datasheet: IXFH10N100 , IXFH10N90 , IXFH11N80 , IXFH12N100 , IXFH12N100Q , IXFH12N90 , IXFH12N90Q , IXFH13N50 , IRF530N , IXFH13N80Q , IXFH14N100 , IXFH14N80 , IXFH15N100 , IXFH15N60 , IXFH15N80 , IXFH16N90 , IXFH20N60 .

 

 
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