IRFHM3911 MOSFET. Datasheet pdf. Equivalent

IRFHM3911TRPbF HEXFET Power MOSFET VDSS 100 V RDS(on) max G 115 mS S (@VGS = 10V) S Qg (typical) 17 nC D D D D ID D 11 APQFN 3.3X3.3 mm (@TC (Bottom) = 25C) Applications POE+ Power Sourcing Equipment Switch Features Benefits Large Safe Operating Area (SOA) Increased Ruggedness Low Thermal Resistance to PCB Enable better the

IRFHM3911TRPbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 115 mG S (@VGS = 10V) S S Qg (typical) 17 nC D D ID D D 11 AD (@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications POE+ Power Sourcing Equipment Switch Features Benefits Large Safe Operating Area (SOA) Increased Ruggedness Low Thermal Resistance to PCB Enable better

IRFHM8329PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.1G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for

IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m(@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (

PD - 96368AIRFHM792TRPbFIRFHM792TR2PbFHEXFET Power MOSFETVDS 100 VVgs max TOP VIEWV 20DRDS(on) max D D D195 m8 7 6 5(@VGS = 10V) GSGSDQg typ4.2 nC DDDDDID 3.4 A1 2 3 4(@Tc(Bottom) = 25C)PQFN Dual 3.3X3.3 mmS G S GApplications DC-DC Primary Switch 48V Battery MonitoringFeatures and BenefitsFeatures BenefitsLow R

IRFHM792PbFHEXFET Power MOSFETVDS 100 VVgs max TOP VIEWV 20DRDS(on) max D D D195 m8 7 6 5(@VGS = 10V) GSGSDQg typ4.2 nC DDDDDID 3.4 A1 2 3 4(@Tc(Bottom) = 25C)PQFN Dual 3.3X3.3 mmS G S GApplications DC-DC Primary Switch 48V Battery MonitoringFeatures and BenefitsFeatures BenefitsLow RDSon (

PD -96327AIRFHM830DPbFHEXFET Power MOSFETVDS30 VRDS(on) max D 5 4 G4.3 m(@VGS = 10V)D 6 3 SQg (typical)13nCD 7 2 SRG (typical)1.1 D 8 1 SID 40 A3.3mm x 3.3mm PQFN(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for Buck ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon ( 4.3m) Lower Conduction LossesSchottky intrin

FastIRFET IRFHM4226TRPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 2.4 (@ VGS = 10V) m(@ VGS = 4.5V) 3.3 Qg (typical) 16 nC ID 60 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Control or Synchronous MOSFET for high frequency buck converters Features Benefits Low RDSon (

IRFHM8326PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 4.7G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 6.7 D Qg (typical) 20 nC D D D ID D 70 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for

IRFHM8329PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.1G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for

IRFHM8363PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max G14.9 SG(@VGS = 10V)m SDD(@VGS = 4.5V)20.4DDDDQg typ6.7 nCPQFN Dual 3.3X3.3 mmID 10 A(@Tc(Bottom) = 25C)Applications Power Stage for high frequency buck converters Battery Protection charge and discharge switchesFeatures and BenefitsFeatures BenefitsLow

FastIRFET IRFHM4231TRPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 3.4(@ VGS = 10V) m(@ VGS = 4.5V) 4.6 Qg (typical) 9.7 nC ID 40 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 9.7nC) Low Switching Losses Low RDSon (

IRFHM8334TRPbFVDS 30 V HEXFET Power MOSFETVGS max V 20RDS(on) max 9.0(@VGS = 10V) m(@VGS = 4.5V) 13.5Qg typ. 7.1 nCID PQFN 3.3 X 3.3 mm25 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high frequency buck convertersFeatures BenefitsLow Thermal Resistance to PCB (

IRFHM8330PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.6G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 9.9 D Qg (typical) 9.3 nC D D D ID D 25 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Control MOSFET for sy

IRFHM8235PbF HEXFET Power MOSFET VDSS 25 V VGS max 20 V RDS(on) max 7.7G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 13.4 D Qg (typical) 7.7 nC D D D ID D 25 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Thermal Resistance to PCB (

FastIRFET IRFHM4234TRPbF HEXFET Power MOSFET Top View VDSS 25 V RDS(on) max 4.4 D 5 4 G(@ VGS = 10V) mD 6 3 S(@ VGS = 4.5V) 7.1 D 7 2 SQg (typical) 8.2 nC D 8 1 SID 60 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 8.2 nC) Low Switching

IRFHM8342TRPbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 16(@ VGS = 10V) m(@ VGS = 4.5V) 25 Qg (typical) 5.0 nC ID 20 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Load Switch Features Benefits Low Charge (typical 5.2 nC) Low Switching Losses Low Thermal Resistance to PCB (

FastIRFET IRFHM7194TRPbF HEXFET Power MOSFET VDSS 100 V RDS(on) max 16.4 m(@ VGS = 10V) Qg (typical) 13 nC Rg (typical) 2.0 ID 34 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier Features Benefits Low RDSon (

PD - 97547AIRFHM830PbFHEXFET Power MOSFETVDS30 VRDS(on) max 3.8 m D 5 4 G(@VGS = 10V)D 6 3 SQg (typical)15nCD 7 2 SRG (typical)2.5 D 8 1 S3.3mm x 3.3mm PQFNID 40 A(@Tc(Bottom) = 25C)Applications Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsFeatures BenefitsLow RDSon (

IRFHM8228PbF HEXFET Power MOSFET VDSS 25 V VGS max 20 V RDS(on) max 5.2G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.7 D Qg (typical) 9.0 nC D D D ID A D 25 (@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Control or synchronous MOSFET for synchronous buck converter Features Benefits Low Thermal Resistance to PCB (

PD - 96313IRFHM9331PbFHEXFET Power MOSFETVDS-30 VSS5 D GRDS(on) max 4 DS14.6 mD(@VGS = -10V) 6 D S 3GD7 D S 2Qg (typical)32 nCD18 D SID -11 A 3mm x 3mm PQFN(@TA = 25C)Applicationsl System/load switchFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (

PD -97539AIRFHM831PbFHEXFET Power MOSFETVDS30 VD 5 4 GRDS(on) max 7.8 m(@VGS = 10V) D 6 3 SD 7 2 SQg (typical) 7.3nCD 8 1 SRG (typical) 0.5ID PQFN 3.3mm x 3.3mm40 A(@Tc(Bottom) = 25C)Applications Control MOSFET for Buck ConvertersFeatures and BenefitsBenefitsFeaturesLow Charge (typical 7.3nC) Lower Switching LossesLow Thermal Resistance to PC

PD -96327AIRFHM830DPbFHEXFET Power MOSFETVDS30 VRDS(on) max D 5 4 G4.3 m(@VGS = 10V)D 6 3 SQg (typical)13nCD 7 2 SRG (typical)1.1 D 8 1 SID 40 A3.3mm x 3.3mm PQFN(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for Buck ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon ( 4.3m) Lower Conduction LossesSchottky intrin

IRFHM9391TRPbF HEXFET Power MOSFET VDSS -30 V D 5 4 GRDS(on) max 14.6(@ VGS = -10V) D 6 3 Sm(@ VGS = -4.5V) 22.5 D 7 2 SQg (typical) 32 nC D 8 1 SID PQFN 3.3 x 3.3 mm -11 A(@TA = 25C) Applications System/load switch, Charge or discharge switch for battery protection Features Benefits Low Thermal Resistance to PCB (

IRFHM8337TRPbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 12.4(@ VGS = 10V) m(@ VGS = 4.5V) 17.9 Qg (typical) 5.4 nC ID PQFN 3.3 x 3.3 mm 18 A(@TC = 25C) Applications System/load switch, Charge or discharge switch for battery protection Features Benefits Low Thermal Resistance to PCB (

IRFHM8363PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max G14.9 SG(@VGS = 10V)m SDD(@VGS = 4.5V)20.4DDDDQg typ6.7 nCPQFN Dual 3.3X3.3 mmID 10 A(@Tc(Bottom) = 25C)Applications Power Stage for high frequency buck converters Battery Protection charge and discharge switchesFeatures and BenefitsFeatures BenefitsLow

IRFHM8326PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 4.7G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 6.7 D Qg (typical) 20 nC D D D ID D 70 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for

IRFHM8329PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.1G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for

IRFHM792PbFHEXFET Power MOSFETVDS 100 VVgs max TOP VIEWV 20DRDS(on) max D D D195 m8 7 6 5(@VGS = 10V) GSGSDQg typ4.2 nC DDDDDID 3.4 A1 2 3 4(@Tc(Bottom) = 25C)PQFN Dual 3.3X3.3 mmS G S GApplications DC-DC Primary Switch 48V Battery MonitoringFeatures and BenefitsFeatures BenefitsLow RDSon (

IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m(@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (

IRFHM9331PbFHEXFET Power MOSFETVDS-30 VSS5 D GRDS(on) max 4 DS14.6 mD(@VGS = -10V) 6 D S 3GD7 D S 2Qg (typical)32 nCD18 D SID -11 A 3mm x 3mm PQFN(@TA = 25C)Applicationsl System/load switchFeatures and BenefitsFeatures BenefitsLow Thermal Resistance to PCB (