AM7340N MOSFET. Datasheet pdf. Equivalent
Type Designator: AM7340N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 10 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: DFN3X3
AM7340N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM7340N Datasheet (PDF)
am7340n.pdf
Analog Power AM7340NN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 5.5 @ VGS = 10V 21converters and power management in portable and 407 @ VGS = 4.5V 19battery-p
am7341p.pdf
Analog Power AM7341PP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 19 @ VGS = -10V -12converters and power management in portable and -4027 @ VGS = -4.5V -10batt
am7343p.pdf
Analog Power AM7343PP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 12 @ VGS = -10V -14converters and power management in portable and -4018 @ VGS = -4.5V -12batt
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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