IXFH20N60Q
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFH20N60Q
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 90
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 410
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35
Ohm
Package:
TO247
IXFH20N60Q
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFH20N60Q
Datasheet (PDF)
..1. Size:144K ixys
ixfh20n60q ixft20n60q.pdf 
IXFH 20N60Q VDSS = 600 VHiPerFETTMIXFT 20N60Q ID25 = 20 APower MOSFETs RDS(on) = 0.35 Q-Classtrr 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt,Low Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS C
5.1. Size:82K ixys
ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 15 N60 600 V 15 A 0.50 WPower MOSFETsIXFH/IXFM 20 N60 600 V 20 A 0.35 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 2
7.1. Size:226K ixys
ixfp20n85x ixfh20n85x.pdf
X-Class HiPerFETTM VDSS = 850VIXFP20N85XPower MOSFET ID25 = 20AIXFH20N85X RDS(on) 330m N-Channel Enhancement ModeAvalanche RatedTO-220 (IXFP)GSymbol Test Conditions Maximum RatingsDSVDSS TJ = 25C to 150C 850 V D (Tab)VDGR TJ = 25C to 150C, RGS = 1M 850 VTO-247 (IXFH)VGSS Continuous 30 VVGSM Transient 4
7.2. Size:288K ixys
ixfa20n85xhv ixfh20n85x ixfa20n85xhv ixfp20n85x ixfh20n85x.pdf
X-Class HiPerFETTM VDSS = 850VIXFA20N85XHVPower MOSFET ID25 = 20AIXFP20N85X RDS(on) 330m IXFH20N85XN-Channel Enhancement ModeTO-263HVAvalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 850 VVDGR TJ = 25C to 150C, RGS = 1M 850 VVGSS Continuo
7.3. Size:157K ixys
ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3.pdf
Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFA20N50P3ID25 = 20APower MOSFETsIXFP20N50P3 RDS(on) 300m IXFQ20N50P3N-Channel Enhancement Mode IXFH20N50P3Avalanche RatedTO-220AB (IXFP)Fast Intrinsic RectifierTO-263 AA (IXFA)GGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ
7.4. Size:149K ixys
ixfh20n80q ixfk20n80q ixft20n80q.pdf
IXFH20N80Q VDSS = 800 VHiPerFETTMIXFK20N80Q ID25 = 20 APower MOSFETs IXFT20N80Q RDS(on) = 0.42 Q-ClassN-Channel Enhancement Mode trr 250 ns Avalanche Rated,Low Qg, High dv/dtPreliminary DataTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800
7.5. Size:326K ixys
ixfh20n80p ixft20n80p ixfv20n80p.pdf
IXFH 20N80PVDSS = 800 VPolarHVTM HiPerFETIXFT 20N80PID25 = 20 APower MOSFETIXFV 20N80P RDS(on) 520 m N-Channel Enhancement ModeIXFV 20N80PStrr 250 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 150 C 800 VVDGR TJ = 25 C to 150 C; RG
7.6. Size:212K inchange semiconductor
ixfh20n85x.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFH20N85XFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
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