AM7933P Specs and Replacement
Type Designator: AM7933P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 437 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: DFN5X6
AM7933P substitution
- MOSFET ⓘ Cross-Reference Search
AM7933P datasheet
am7933p.pdf
Analog Power AM7933P Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 8 @ VGS = -10V -55c Low thermal impedance -30 12 @ VGS = -4.5V -45c Fast switching speed DFN5X6-8L Typical Applications Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 ... See More ⇒
am7930n.pdf
Analog Power AM7930N Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat 8 @ V = 10V 37 GS dissipation. Typical applications are DC-DC 30 converters and power management in portable and 12 @ V = 4.5V 30 GS b... See More ⇒
am7931p.pdf
Analog Power AM7931P Dual P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat 13 @ V = 10V 29 GS dissipation. Typical applications are DC-DC -30 converters and power management in portable and 18 @ V = 4.5V 25 GS ... See More ⇒
Detailed specifications: AM7630N, AM7632N, AM7640N, AM7910N, AM7920N, AM7924N, AM7930N, AM7931P, MMIS60R580P, AM7940N, AM7960N, AM7961P, AM7962N, AM80N03-05D, AM80N03-06D, AM80N06-05D, AM80N20-40PCFM
Keywords - AM7933P MOSFET specs
AM7933P cross reference
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AM7933P replacement
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