AM90N03-03P
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM90N03-03P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 90
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 36
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 466
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035
Ohm
Package:
TO-220AB
AM90N03-03P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM90N03-03P
Datasheet (PDF)
..1. Size:295K analog power
am90n03-03p.pdf 
Analog Power AM90N03-03PN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)3.5 @ VGS = 10V Low thermal impedance 3090a4.6 @ VGS = 4.5V Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits DRAIN connected Battery Powered Power Tools to TAB
4.1. Size:319K analog power
am90n03-03b.pdf
Analog Power AM90N03-03BN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)3.8 @ VGS = 10V Low thermal impedance 3090a4.6 @ VGS = 4.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
5.1. Size:117K analog power
am90n03-08p.pdf
Analog Power AM90N03-08PN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 8 @ VGS = 10Vconverters and power management in portable and 3090a12 @ VGS = 4.5Vbattery
5.2. Size:286K analog power
am90n03-01p.pdf
Analog Power AM90N03-01PN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)1.9 @ VGS = 10V Low thermal impedance 30120a2.9 @ VGS = 4.5V Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits DRAIN connected Battery Powered Power Tools to TAB
5.3. Size:302K analog power
am90n03-04d.pdf
Analog Power AM90N03-04DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)4.5 @ VGS = 10V86 Low thermal impedance 305.5 @ VGS = 4.5V78 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM
5.4. Size:73K analog power
am90n03-04i.pdf
Analog Power AM90N03-04IN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 4.5 @ VGS = 10V 87converters and power management in portable and 305.5 @ VGS = 4.5V 78bat
5.5. Size:53K analog power
am90n03-06b.pdf
Analog Power AM90N03-06BN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 6 @ VGS = 10Vconverters and power management such as 3090a7.2 @ VGS = 4.5Vcomputers, pri
5.6. Size:57K analog power
am90n03-02d.pdf
Analog Power AM90N03-02DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 2 @ VGS = 10V 130dissipation. Typical applications are DC-DC 30converters and power management in portable and 3.2 @ VGS = 4.5V 103bat
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