All MOSFET. IXFH26N60Q Datasheet

 

IXFH26N60Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFH26N60Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO247

 IXFH26N60Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH26N60Q Datasheet (PDF)

 ..1. Size:107K  ixys
 ixfh26n60q ixft26n60q.pdf

IXFH26N60Q IXFH26N60Q

IXFH 26N60Q VDSS = 600 VHiPerFETTMIXFT 26N60Q ID25 = 26 APower MOSFETsRDS(on) = 0.25 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 V(TAB)VGS Continuous 20 V

 5.1. Size:197K  ixys
 ixfh26n60p ixft26n60p ixfv26n60p.pdf

IXFH26N60Q IXFH26N60Q

IXFH26N60P VDSS = 600 VPolarHVTMIXFT26N60P ID25 = 26 APower MOSFET IXFV26N60P RDS(on) 270 m N-Channel Enhancement ModeIXFV26N60PS trr 200 nsFast Recovery DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Contin

 7.1. Size:158K  ixys
 ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf

IXFH26N60Q IXFH26N60Q

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETsIXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to

 7.2. Size:145K  ixys
 ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf

IXFH26N60Q IXFH26N60Q

HiPerFETTM VDSS ID25 RDS(on)Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1

 7.3. Size:155K  ixys
 ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf

IXFH26N60Q IXFH26N60Q

Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFA26N50P3ID25 = 26APower MOSFETsIXFP26N50P3 RDS(on) 230m IXFQ26N50P3N-Channel Enhancement Mode IXFH26N50P3Avalanche RatedTO-220AB (IXFP)Fast Intrinsic RectifierTO-263 AA (IXFA)GGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ

 7.4. Size:323K  ixys
 ixfv26n50p ixfh26n50p.pdf

IXFH26N60Q IXFH26N60Q

IXFH 26N50P VDSS = 500 VPolarHVTM HiPerFETIXFV 26N50P ID25 = 26 APower MOSFET IXFV 26N50PS RDS(on) 230 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V TO-247 (IXFH)

Datasheet: IXFH20N60 , IXFH20N60Q , IXFH20N80Q , IXFH21N50 , IXFH22N55 , IXFH24N50 , IXFH26N50 , IXFH26N50Q , SKD502T , IXFH30N50 , IXFH32N50 , IXFH32N50Q , IXFH35N30 , IXFH40N30 , IXFH40N30Q , IXFH42N20 , IXFH4N100Q .

 

 
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