STN2300 MOSFET. Datasheet pdf. Equivalent
Type Designator: STN2300
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.2 nC
trⓘ - Rise Time: 14.5 nS
Cossⓘ - Output Capacitance: 116 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOT-23
STN2300 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STN2300 Datasheet (PDF)
stn2300.pdf
STN2300 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2300 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =26m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =35m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/2.0A, RDS(ON) =50m(typ.)@VGS =1.8V provide excellent RDS
stn2300a.pdf
STN2300A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2300A is the N-Channel logic 20V/4.0A, RDS(ON) =22m(typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/3.0A, RDS(ON) =25m(typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.0A, RDS(ON) =33m(typ.)@VGS =1.8V technology to provide excellent RD
stn2306.pdf
STN2306 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2306 is the N-Channel logic enhancement 30V/3.6A, RDS(ON)= 45m(typ.)@VGS= 10V mode power field effect transistor is produced using 30V/2.8A, RDS(ON)= 55m(typ.)@VGS= 4.5V high cell density. advanced trench technology to Super high density cell design for extremely provide excellent RDS(ON)
stn2302.pdf
STN2302 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN2302 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =50m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =65m(typ.)@VGS =2.5V high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and Super high densi
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
