STN3400 Specs and Replacement

Type Designator: STN3400

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42.1 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: SOT-23L

STN3400 substitution

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STN3400 datasheet

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 stn3400.pdf pdf_icon

STN3400

STN3400 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3400 is the N-Channel logic enhancement 30V/5.8A, RDS(ON) =24m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/5.0A, RDS(ON) =26m (typ.)@VGS =4.5V high cell density. advanced trench technology to 30V/3.5A, RDS(ON) =30m (typ.)@VGS =2.5V provide excellent RDS(... See More ⇒

 0.1. Size:368K  semtron
 stn3400a.pdf pdf_icon

STN3400

STN3400A 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3400A is the N-Channel logic 30V/5.6A, RDS(ON) =28m (typ.)@VGS =10V enhancement mode power field effect transistor is 30V/5.0A, RDS(ON) =30m (typ.)@VGS =4.5V produced using high cell density. advanced trench 30V/3.2A, RDS(ON) =35m (typ.)@VGS =2.5V technology to provide excellent RDS... See More ⇒

 8.1. Size:371K  semtron
 stn3404.pdf pdf_icon

STN3400

STN3404 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3404 is the N-Channel logic enhancement 30V/6.0A, RDS(ON) =18m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.8A, RDS(ON) =25m (typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l... See More ⇒

 8.2. Size:372K  semtron
 stn3406.pdf pdf_icon

STN3400

STN3406 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3406 is the N-Channel logic enhancement 30V/5.6A, RDS(ON) =23m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.2A, RDS(ON) =35m (typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l... See More ⇒

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Detailed specifications: STN2300, STN2300A, STN2302, STN2306, STN2342, STN2342A, STN2NE10, STN2NE10L, EMB04N03H, STN3400A, STN3404, STN3406, STN3414, STN3446, STN3456, STN3P6F6, STN4102

Keywords - STN3400 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.