All MOSFET. STN3404 Datasheet

 

STN3404 Datasheet and Replacement


   Type Designator: STN3404
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOT-23L
 

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STN3404 Datasheet (PDF)

 ..1. Size:371K  semtron
 stn3404.pdf pdf_icon

STN3404

STN3404 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3404 is the N-Channel logic enhancement 30V/6.0A, RDS(ON) =18m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.8A, RDS(ON) =25m(typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l

 8.1. Size:368K  semtron
 stn3400a.pdf pdf_icon

STN3404

STN3400A 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3400A is the N-Channel logic 30V/5.6A, RDS(ON) =28m(typ.)@VGS =10V enhancement mode power field effect transistor is 30V/5.0A, RDS(ON) =30m(typ.)@VGS =4.5V produced using high cell density. advanced trench 30V/3.2A, RDS(ON) =35m(typ.)@VGS =2.5V technology to provide excellent RDS

 8.2. Size:372K  semtron
 stn3406.pdf pdf_icon

STN3404

STN3406 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3406 is the N-Channel logic enhancement 30V/5.6A, RDS(ON) =23m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.2A, RDS(ON) =35m(typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l

 8.3. Size:373K  semtron
 stn3400.pdf pdf_icon

STN3404

STN3400 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3400 is the N-Channel logic enhancement 30V/5.8A, RDS(ON) =24m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/5.0A, RDS(ON) =26m(typ.)@VGS =4.5V high cell density. advanced trench technology to 30V/3.5A, RDS(ON) =30m(typ.)@VGS =2.5V provide excellent RDS(

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Datasheet: STN2302 , STN2306 , STN2342 , STN2342A , STN2NE10 , STN2NE10L , STN3400 , STN3400A , MMIS60R580P , STN3406 , STN3414 , STN3446 , STN3456 , STN3P6F6 , STN4102 , STN410D , STN4110 .

History: 2SK953

Keywords - STN3404 MOSFET datasheet

 STN3404 cross reference
 STN3404 equivalent finder
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