STN3456 Specs and Replacement

Type Designator: STN3456

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TSOP-6P

STN3456 substitution

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STN3456 datasheet

 ..1. Size:396K  stansontech
 stn3456.pdf pdf_icon

STN3456

STN3456 STN3456 STN3456 STN3456 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The STN3456 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited fo... See More ⇒

 9.1. Size:360K  semtron
 stn3414.pdf pdf_icon

STN3456

STN3414 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3414 is the N-Channel logic enhancement 20V/5.0A, RDS(ON) =30m (typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =42m (typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =50m (typ.)@VGS =1.8V provide excellent RDS... See More ⇒

 9.2. Size:368K  semtron
 stn3400a.pdf pdf_icon

STN3456

STN3400A 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3400A is the N-Channel logic 30V/5.6A, RDS(ON) =28m (typ.)@VGS =10V enhancement mode power field effect transistor is 30V/5.0A, RDS(ON) =30m (typ.)@VGS =4.5V produced using high cell density. advanced trench 30V/3.2A, RDS(ON) =35m (typ.)@VGS =2.5V technology to provide excellent RDS... See More ⇒

 9.3. Size:371K  semtron
 stn3404.pdf pdf_icon

STN3456

STN3404 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3404 is the N-Channel logic enhancement 30V/6.0A, RDS(ON) =18m (typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.8A, RDS(ON) =25m (typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l... See More ⇒

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Detailed specifications: STN2NE10, STN2NE10L, STN3400, STN3400A, STN3404, STN3406, STN3414, STN3446, IRFP064N, STN3P6F6, STN4102, STN410D, STN4110, STN4130, STN4186D, STN4189D, STN4346

Keywords - STN3456 MOSFET specs

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