STN4110 PDF and Equivalents Search

 

STN4110 Specs and Replacement


   Type Designator: STN4110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-251 TO-252
 

 STN4110 substitution

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STN4110 datasheet

 ..1. Size:870K  stansontech
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STN4110

STN4110 N Channel Enhancement Mode MOSFET 40.0A DESCRIPTION STN4110 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. PIN CONFIGURATION (D-PAK) FEATURE 60V/20.0A, RDS(ON) = 10m (Typ.) TO-252 TO-251 @VGS = ... See More ⇒

 9.1. Size:542K  stansontech
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STN4110

STN4102 N Channel Enhancement Mode MOSFET 15.0A DESCRIPTION STN4102 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been op... See More ⇒

 9.2. Size:828K  stansontech
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STN4110

STN4186D N Channel Enhancement Mode MOSFET 35.0A DESCRIPTION STN4186D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been o... See More ⇒

 9.3. Size:492K  stansontech
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STN4110

STN410D N Channel Enhancement Mode MOSFET 15.0A DESCRIPTION STN410D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been o... See More ⇒

Detailed specifications: STN3404 , STN3406 , STN3414 , STN3446 , STN3456 , STN3P6F6 , STN4102 , STN410D , IRF3205 , STN4130 , STN4186D , STN4189D , STN4346 , STN4392 , STN4402 , STN4412 , STN4416 .

History: AGM302C1 | IRF250B | H7N1005LD | TK8P60W5 | APT43F60L | RFK35N08 | AGM16N10C

Keywords - STN4110 MOSFET specs

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