All MOSFET. STN4346 Datasheet

 

STN4346 Datasheet and Replacement


   Type Designator: STN4346
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SOP-8
 

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STN4346 Datasheet (PDF)

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STN4346

STN4346STN4346STN4346STN4346N Channel Enhancement Mode MOSFET6.8ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4392 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited

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STN4346

STN4392STN4392STN4392STN4392N Channel Enhancement Mode MOSFET13ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4392 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited f

Datasheet: STN3456 , STN3P6F6 , STN4102 , STN410D , STN4110 , STN4130 , STN4186D , STN4189D , IRF540 , STN4392 , STN4402 , STN4412 , STN4416 , STN4426 , STN442D , STN4438 , STN4440 .

History: HM10N70F | SPC4539 | MP10N60EIB | IRFU9110PBF | SVF20NE50PN | TK16N60W | IPA65R1K0CE

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