STN4480 MOSFET. Datasheet pdf. Equivalent
Type Designator: STN4480
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
Package: SOP-8
STN4480 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STN4480 Datasheet (PDF)
stn4480.pdf
STN4480 N Channel Enhancement Mode MOSFET 14.0A DESCRIPTION STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management an
stn4488l.pdf
STN4488L N Channel Enhancement Mode MOSFET 20.0A DESCRIPTION STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION FEATURE SOP-8 30V/20A, RDS(ON) = 3.8m (Typ.) @
stn4402.pdf
STN4402STN4402STN4402STN4402N Channel Enhancement Mode MOSFET12ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4402 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited f
stn4412.pdf
STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and
stn4438.pdf
STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and
stn442d.pdf
STN442D N Channel Enhancement Mode MOSFET 37.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. FEATURE PIN CONFIGURATION (D-PAK) l 60V/20.0A, R = 24m (Typ.) TO-252 DS(ON) @VGS = 10V l 60V/20.0A, R = 31m DS(ON) @VGS = 4.5V l Super high density ce
stn4416.pdf
STN4416STN4416STN4416STN4416N Channel Enhancement Mode MOSFET10ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4416 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited f
stn4440.pdf
STN4440 N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and
stn4426.pdf
STN4426STN4426STN4426STN4426N Channel Enhancement Mode MOSFET8.0ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4426 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited
stn4438.pdf
RUMWUMW STN44388.2A N Channel Enhancement Mode MOSFET DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power manage
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
