All MOSFET. STN4536 Datasheet

 

STN4536 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STN4536
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP-8

 STN4536 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STN4536 Datasheet (PDF)

 ..1. Size:702K  stansontech
 stn4536.pdf

STN4536 STN4536

3 STN4536 Due N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN4536 is Due N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power manageme

 9.1. Size:640K  stansontech
 stn454d.pdf

STN4536 STN4536

STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been opt

 9.2. Size:611K  stansontech
 stn4526.pdf

STN4536 STN4536

STN4526 N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management an

 9.3. Size:354K  stansontech
 stn4546.pdf

STN4536 STN4536

STN4546STN4546STN4546STN4546N Channel Enhancement Mode MOSFET6.0ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4526 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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