STN4536 MOSFET Datasheet: N-Ch, 40V, 10A. Full specification with pinout and replacement list

STN4536 Specs and Replacement

   Type Designator: STN4536
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP-8

STN4536 substitution

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STN4536 datasheet

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3 STN4536 Due N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN4536 is Due N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power manageme... See More ⇒

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STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been opt... See More ⇒

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STN4526 N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management an... See More ⇒

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STN4546 STN4546 STN4546 STN4546 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited ... See More ⇒

Detailed specifications: STN4416 , STN4426 , STN442D , STN4438 , STN4440 , STN4480 , STN4488L , STN4526 , IRFB4227 , STN4546 , STN454D , STN4822 , STN4826 , STN4828 , STN4842 , STN484D , STN4850 .