STN4826 Specs and Replacement

Type Designator: STN4826

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 243 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: SOP-8

STN4826 substitution

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STN4826 datasheet

 ..1. Size:681K  stansontech
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STN4826

STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook comput... See More ⇒

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STN4826

STN4822 STN4822 STN4822 STN4822 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURA... See More ⇒

 8.2. Size:506K  stansontech
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STN4826

STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION The STN4828 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook compu... See More ⇒

 8.3. Size:952K  cn vbsemi
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STN4826

STN4828 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel ... See More ⇒

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Detailed specifications: STN4440, STN4480, STN4488L, STN4526, STN4536, STN4546, STN454D, STN4822, IRFB4115, STN4828, STN4842, STN484D, STN4850, STN4920, STN4946, STN4972, STN5PF02V

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs