STN4920 MOSFET. Datasheet pdf. Equivalent
Type Designator: STN4920
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 7.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 240 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOP-8
STN4920 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STN4920 Datasheet (PDF)
stn4920.pdf
STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION FEATURE SOP-8 30V/7.2A, RDS(ON) = 28m@VGS
stn4972.pdf
STN4972STN4972STN4972STN4972Dual N Channel Enhancement Mode MOSFET8.5ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4972 is the Dual N-Channel logic enhancement mode power field effect transistorswhich are produced using high cell density DMOS trench technology. It is suitable forthe power management applications in the portable or battery powered system.PIN CONFIGURA
stn4946.pdf
STN4946STN4946STN4946STN4946Dual N Channel Enhancement Mode MOSFET12ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STN4946 is the Dual N-Channel logic enhancement mode power field effecttransistors are produced using high cell density , DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particular
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