STP110N55F6 Specs and Replacement

Type Designator: STP110N55F6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 504 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: TO-220

STP110N55F6 substitution

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STP110N55F6 datasheet

 ..1. Size:647K  st
stp110n55f6.pdf pdf_icon

STP110N55F6

STP110N55F6 N-channel 55 V, 4.5 typ., 110 A STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID TAB STP110N55F6 55 V 5.2 m 110 A Low gate charge Very low on-resistance 3 2 1 High avalanche ruggedness TO-220 Applications Switching applications Description Figure 1. Internal schematic diagr... See More ⇒

 7.1. Size:626K  1
stp110n7f6.pdf pdf_icon

STP110N55F6

STP110N7F6 N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 110 A 176 W Very low on-resistance 3 2 1 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power loss Applications Figure 1. Internal schem... See More ⇒

 7.2. Size:681K  st
stp110n8f7.pdf pdf_icon

STP110N55F6

STP110N8F7 N-channel 80 V, 6.4 m typ., 80 A, STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT STP110N8F7 80 V 7.5 m 80 A 170 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Swit... See More ⇒

 7.3. Size:645K  st
stp110n7f6.pdf pdf_icon

STP110N55F6

STP110N7F6 N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 110 A 176 W Very low on-resistance 3 2 1 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power loss Applications Figure 1. Internal schem... See More ⇒

Detailed specifications: STP10N105K5, STP10N60M2, STP10N65K3, STP10N95K5, STP10NK50Z, STP10NK60ZFP, STP10P6F6, STP110N10F7, AON6380, STP110N8F6, STP11N65M2, STP11N65M5, STP11NM60A, STP11NM60FDFP, STP11NM60FP, STP11NM60N, STP11NM65N

Keywords - STP110N55F6 MOSFET specs

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