STP11NM60FDFP Datasheet and Replacement
Type Designator: STP11NM60FDFP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO-220FP
- MOSFET Cross-Reference Search
STP11NM60FDFP Datasheet (PDF)
stb11nm60fd-1 stb11nm60fdt4 stp11nm60fdfp.pdf

STB11NM60FD - STB11NM60FD-1STP11NM60FD - STP11NM60FDFPN-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAKFDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID32 3STB11NM60FD 600V
stb11nm60fd stb11nm60fd-1 stp11nm60fd stp11nm60fdfp.pdf

STB11NM60FD - STB11NM60FD-1STP11NM60FD - STP11NM60FDFPN-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAKFDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID32 3STB11NM60FD 600V
stp11nm60fd.pdf

STP11NM60FDSTP11NM60FDFP - STB11NM60FD-1N-CHANNEL 600V - 0.40 - 11A TO-220 / TO-220FP/I2PAKFDmeshPower MOSFET (with FAST DIODE)TYPE VDSS RDS(on) IDSTP11NM60FD 600 V
stb11nm60-1 stb11nm60t4 stp11nm60fp.pdf

STP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-1N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAKMDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID(@TJ=TJmax)332211STP11NM60 650V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMM11N80M3 | FDMS9620S | AM2314NE | RFP2N10L | IRFI7536G
Keywords - STP11NM60FDFP MOSFET datasheet
STP11NM60FDFP cross reference
STP11NM60FDFP equivalent finder
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History: WMM11N80M3 | FDMS9620S | AM2314NE | RFP2N10L | IRFI7536G



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