STP11NM60FDFP Datasheet and Replacement
Type Designator: STP11NM60FDFP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO-220FP
STP11NM60FDFP substitution
STP11NM60FDFP Datasheet (PDF)
stb11nm60fd-1 stb11nm60fdt4 stp11nm60fdfp.pdf
STB11NM60FD - STB11NM60FD-1STP11NM60FD - STP11NM60FDFPN-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAKFDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID32 3STB11NM60FD 600V
stb11nm60fd stb11nm60fd-1 stp11nm60fd stp11nm60fdfp.pdf
STB11NM60FD - STB11NM60FD-1STP11NM60FD - STP11NM60FDFPN-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAKFDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID32 3STB11NM60FD 600V
stp11nm60fd.pdf
STP11NM60FDSTP11NM60FDFP - STB11NM60FD-1N-CHANNEL 600V - 0.40 - 11A TO-220 / TO-220FP/I2PAKFDmeshPower MOSFET (with FAST DIODE)TYPE VDSS RDS(on) IDSTP11NM60FD 600 V
stb11nm60-1 stb11nm60t4 stp11nm60fp.pdf
STP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-1N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAKMDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID(@TJ=TJmax)332211STP11NM60 650V
Datasheet: STP10NK60ZFP , STP10P6F6 , STP110N10F7 , STP110N55F6 , STP110N8F6 , STP11N65M2 , STP11N65M5 , STP11NM60A , 20N50 , STP11NM60FP , STP11NM60N , STP11NM65N , STP120NH03L , STP12N50M2 , STP12N60M2 , STP12NM50FD , STP12NM50FP .
History: PSMN1R6-30BL | HM4454 | WMB120P06TS | TK5A60W5 | CS4N70FA9D | NCE0260P | GSM4925W
Keywords - STP11NM60FDFP MOSFET datasheet
STP11NM60FDFP cross reference
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History: PSMN1R6-30BL | HM4454 | WMB120P06TS | TK5A60W5 | CS4N70FA9D | NCE0260P | GSM4925W
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