All MOSFET. STP12NM60N Datasheet

 

STP12NM60N MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP12NM60N
   Marking Code: P12NM60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30.5 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.41 Ohm
   Package: TO-220

 STP12NM60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP12NM60N Datasheet (PDF)

 ..1. Size:615K  st
stb12nm60n-1 stb12nm60n stf12nm60n stp12nm60n stw12nm60n.pdf

STP12NM60N
STP12NM60N

STB12NM60N/-1 - STF12NM60NSTP12NM60N - STW12NM60NN-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB12NM60N 650V

 ..2. Size:618K  st
stb12nm60n-1 stf12nm60n stp12nm60n stw12nm60n.pdf

STP12NM60N
STP12NM60N

STB12NM60N/-1 - STF12NM60NSTP12NM60N - STW12NM60NN-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB12NM60N 650V

 7.1. Size:581K  st
std12nm50n stf12nm50n sti12nm50n stp12nm50n.pdf

STP12NM60N
STP12NM60N

STB12NM50N,STD12NM50N,STI12NM50NSTF12NM50N, STP12NM50NN-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFETTO-220 - DPAK - D2PAK - I2PAK - TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB12NM50N 550 V 0.38 11 AIPAKTO-220STD12NM50N 550 V 0.38 11 A31STI12NM50N 550 V 0.38 11 ADPAKSTF12NM50N 550 V 0.38 11 A (1)STP12NM50N 5

 7.2. Size:478K  st
stb12nm50fdt4 stp12nm50fd stw14nm50fd.pdf

STP12NM60N
STP12NM60N

STB12NM50FD - STB12NM50FD-1STP12NM50FD/FP - STW14NM50FDN-channel 500V - 0.32 - 12A - TO-220/FP - D2/I2PAK - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID Pw33STB12NM50FD 500V

 7.3. Size:586K  st
stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf

STP12NM60N
STP12NM60N

STB12NM50N,STD12NM50N,STI12NM50NSTF12NM50N, STP12NM50NN-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFETTO-220 - DPAK - D2PAK - I2PAK - TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB12NM50N 550 V 0.38 11 AIPAKTO-220STD12NM50N 550 V 0.38 11 A31STI12NM50N 550 V 0.38 11 ADPAKSTF12NM50N 550 V 0.38 11 A (1)STP12NM50N 5

 7.4. Size:542K  st
stp12nm50 stp12nm50fp stb12nm50 stb12nm50-1.pdf

STP12NM60N
STP12NM60N

STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V

 7.5. Size:618K  st
stb12nm50t4 stp12nm50 stp12nm50fp.pdf

STP12NM60N
STP12NM60N

STB12NM50T4, STP12NM50, STP12NM50FPDatasheetN-channel 500 V, 300 m typ., 12 A MDmesh Power MOSFETs in a DPAK, TO-220 and TO-220FP packagesFeaturesTABVDS RDS(on) max. IDOrder codes312D PAK3STB12NM50T421TO-220FPTAB STP12NM50 500 V 350 m 12 ASTP12NM50FP32 100% avalanche tested1TO-220 Low input capacitance and gate charge Low gate inp

 7.6. Size:541K  st
stb12nm50t4 stp12nm50fp.pdf

STP12NM60N
STP12NM60N

STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V

 7.7. Size:483K  st
stb12nm50fd stp12nm50fd-fp stw14nm50fd.pdf

STP12NM60N
STP12NM60N

STB12NM50FD - STB12NM50FD-1STP12NM50FD/FP - STW14NM50FDN-channel 500V - 0.32 - 12A - TO-220/FP - D2/I2PAK - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID Pw33STB12NM50FD 500V

 7.8. Size:221K  inchange semiconductor
stp12nm50fp.pdf

STP12NM60N
STP12NM60N

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP12NM50FPFEATURES Drain-source on-resistance:RDS(on) 0.35@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe suitable for increasing power density of high voltage convertersallowing system miniaturization and

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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