STP12NM60N
MOSFET. Datasheet pdf. Equivalent
Type Designator: STP12NM60N
Marking Code: P12NM60N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 90
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 30.5
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 65
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.41
Ohm
Package:
TO-220
STP12NM60N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP12NM60N
Datasheet (PDF)
..2. Size:618K st
stb12nm60n-1 stf12nm60n stp12nm60n stw12nm60n.pdf 
STB12NM60N/-1 - STF12NM60NSTP12NM60N - STW12NM60NN-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB12NM60N 650V
7.1. Size:581K st
std12nm50n stf12nm50n sti12nm50n stp12nm50n.pdf
STB12NM50N,STD12NM50N,STI12NM50NSTF12NM50N, STP12NM50NN-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFETTO-220 - DPAK - D2PAK - I2PAK - TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB12NM50N 550 V 0.38 11 AIPAKTO-220STD12NM50N 550 V 0.38 11 A31STI12NM50N 550 V 0.38 11 ADPAKSTF12NM50N 550 V 0.38 11 A (1)STP12NM50N 5
7.2. Size:478K st
stb12nm50fdt4 stp12nm50fd stw14nm50fd.pdf
STB12NM50FD - STB12NM50FD-1STP12NM50FD/FP - STW14NM50FDN-channel 500V - 0.32 - 12A - TO-220/FP - D2/I2PAK - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID Pw33STB12NM50FD 500V
7.3. Size:586K st
stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf
STB12NM50N,STD12NM50N,STI12NM50NSTF12NM50N, STP12NM50NN-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFETTO-220 - DPAK - D2PAK - I2PAK - TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB12NM50N 550 V 0.38 11 AIPAKTO-220STD12NM50N 550 V 0.38 11 A31STI12NM50N 550 V 0.38 11 ADPAKSTF12NM50N 550 V 0.38 11 A (1)STP12NM50N 5
7.4. Size:542K st
stp12nm50 stp12nm50fp stb12nm50 stb12nm50-1.pdf
STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V
7.5. Size:618K st
stb12nm50t4 stp12nm50 stp12nm50fp.pdf
STB12NM50T4, STP12NM50, STP12NM50FPDatasheetN-channel 500 V, 300 m typ., 12 A MDmesh Power MOSFETs in a DPAK, TO-220 and TO-220FP packagesFeaturesTABVDS RDS(on) max. IDOrder codes312D PAK3STB12NM50T421TO-220FPTAB STP12NM50 500 V 350 m 12 ASTP12NM50FP32 100% avalanche tested1TO-220 Low input capacitance and gate charge Low gate inp
7.6. Size:541K st
stb12nm50t4 stp12nm50fp.pdf
STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V
7.7. Size:483K st
stb12nm50fd stp12nm50fd-fp stw14nm50fd.pdf
STB12NM50FD - STB12NM50FD-1STP12NM50FD/FP - STW14NM50FDN-channel 500V - 0.32 - 12A - TO-220/FP - D2/I2PAK - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID Pw33STB12NM50FD 500V
7.8. Size:221K inchange semiconductor
stp12nm50fp.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP12NM50FPFEATURES Drain-source on-resistance:RDS(on) 0.35@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe suitable for increasing power density of high voltage convertersallowing system miniaturization and
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