STP16N50M2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP16N50M2
Marking Code: 16N50M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19.5 nC
trⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 44 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO-220
STP16N50M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP16N50M2 Datasheet (PDF)
std16n50m2 stf16n50m2 stp16n50m2.pdf
STD16N50M2, STF16N50M2, STP16N50M2N-channel 500 V, 0.24 typ.,13 A, MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packagesDatasheet - preliminary dataFeaturesTAB3Order codes VDS @ TJmax RDS(on) max. ID1DPAKSTD16N50M2STF16N50M2 550 V 0.28 13 ASTP16N50M2TAB Extremely low gate charge Excellent output capacitance (Coss) profile3322 10
stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5.pdf
STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.240 , 12 A MDmesh V Power MOSFETin TO-220FP, TO-220, IPAK, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max33 322 21STF16N65M51 1TO-220STI16N65M5 TO-247 TO-220FPSTP16N65M5 710 V
stf16n65m5 sti16n65m5 stp16n65m5 stu16n65m5 stw16n65m5.pdf
STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.230 , 12 A MDmesh V Power MOSFETin TO-220FP, IPAK, TO-220, IPAK, TO-247FeaturesTABTABVDSS @ RDS(on) Type IDTJmax max32 3 3211 2STF16N65M51TO-220FPTO-220STI16N65M5 IPAKSTP16N65M5 710 V
stb16nk65z-s stp16nk65z.pdf
STP16NK65ZSTB16NK65Z-SN-CHANNEL 650V - 0.38 - 13A TO-220 / I2SPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP16NK65Z 650 V
stb16nm50n stf16nm50n sti16nm50n stp16nm50n stw16nm50n.pdf
STB16NM50N - STF/I16NM50NSTP16NM50N - STW16NM50NN-channel 500 V - 0.21 - 15 A MDmesh II Power MOSFETD2PAK - I2PAK - TO-220 - TO-247- TO-220FPFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB16NM50N 550 V 0.26 15 ADPAKIPAKSTI16NM50N 550 V 0.26 15 A3STF16NM50N 550 V 0.26 15 A (1)21STP16NM50N 550 V 0.26 15 ATO-247STW16NM50N 550
stp16nf06l.pdf
STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V
std16nf25 stf16nf25 stp16nf25.pdf
STD16NF25STF16NF25 - STP16NF25N-channel 250V - 0.195 - 13A - DPAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS ID PwMax3STD16NF25 250V
stp16nb25-.pdf
STP16NB25STP16NB25FP N - CHANNEL 250V - 0.220 - 16A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP16NB25 250 V
stp16n10l.pdf
STP16N10LN - CHANNEL 100V - 0.14 - 16A - TO-220 POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP16N10L 100 V
stp16nf06fp.pdf
STP16NF06STP16NF06FPN-channel 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP16NF06 60V
stp16nb25.pdf
STP16NB25STP16NB25FPN - CHANNEL 250V - 0.220 - 16A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP16NB25 250 V
stp16ne06l stp16ne06lfp.pdf
STP16NE06LSTP16NE06L/FPN - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE POWER MOSFETTARGET DATATYPE V R IDSS DS(on) DSTP16NE06L 60 V
stp16ne06l.pdf
STP16NE06LSTP16NE06L/FPN - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE POWER MOSFETTARGET DATATYPE V R IDSS DS(on) DSTP16NE06L 60 V
stp16nf06l-fp.pdf
STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V
stp16ne06.pdf
STP16NE06STP16NE06FPN - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP16NE06 60 V
stp16n60m2 stu16n60m2.pdf
STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP16N60M2 600 V 0.32 12 A STU16N60M2 3 2TAB1TO-220 Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested 32IPAK
stp16nf06.pdf
STP16NF06STP16NF06FPN-CHANNEL 60V - 0.08 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06 60 V
stp16ns25 stp16ns25fp.pdf
STP16NS25STP16NS25FPN-CHANNEL 250V - 0.23 - 16A TO-220 / TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP16NS25 250 V
stb16nm50n stf16nm50n sti16nm50n stp16nm50n stw16nm50n.pdf
STB16NM50N - STF/I16NM50NSTP16NM50N - STW16NM50NN-channel 500 V - 0.21 - 15 A MDmesh II Power MOSFETD2PAK - I2PAK - TO-220 - TO-247- TO-220FPFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB16NM50N 550 V 0.26 15 ADPAKIPAKSTI16NM50N 550 V 0.26 15 A3STF16NM50N 550 V 0.26 15 A (1)21STP16NM50N 550 V 0.26 15 ATO-247STW16NM50N 550
stp16ne06 stp16ne06fp 2.pdf
STP16NE06STP16NE06FPN - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP16NE06 60 V
stp16ns25.pdf
STP16NS25STP16NS25FPN-CHANNEL 250V - 0.23 - 16A TO-220 / TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP16NS25 250 V
stp16nf06lfp.pdf
STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V
stp16nk65z stb16nk65z-s.pdf
STP16NK65ZSTB16NK65Z-SN-CHANNEL 650V - 0.38 - 13A TO-220 / I2SPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP16NK65Z 650 V
stp16n65m2 stu16n65m2.pdf
STP16N65M2, STU16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder code VDS @ TJmax RDS(on) max IDTABSTP16N65M2 710 V 0.36 11 ASTU16N65M2 710 V 0.36 11 A3 Extremely low gate charge23 Excellent output capacitance (Coss) profile 121 100% avalanche tested
stf16nk60z stp16nk60z stw16nk60z.pdf
STF16NK60ZSTP16NK60Z, STW16NK60ZN-channel 600 V, 038 , 14 A, TO-220, TO-220FP, TO-247Zener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF16NK60Z 600 V
stp16nf06 stp16nf06fp.pdf
STP16NF06STP16NF06FPN-channel 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP16NF06 60V
stp16nf06l stp16nf06lfp.pdf
STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V
stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5 2.pdf
STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFETin TO-220FP, TO-220, IPAK, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max33 322 21STF16N65M51 1TO-220STI16N65M5 TO-247 TO-220FPSTP16N65M5 710 V
stp16ne06 stp16ne06fp.pdf
STP16NE06STP16NE06FPN - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP16NE06 60 V
stp16nf06 istp16nf06.pdf
N-Channel MOSFET Transistor STP16NF06ISTP16NF06DESCRIPTIONDrain Current I = 16A@ T =25D CStatic Drain-Source On-Resistance: R = 100m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONShigh packing density for low on-resistancerugged avalanchecharacteristics and less critical
stp16nf06.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP16NF06FEATURESTypical R (on)=0.08DSWith low gate drive requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC &DC-CAconvertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25)aSY
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: UT2316G-AE3-R | SM6012NSUB | SM4309PSK | IXKH30N60C5 | SI4654DY | FDMC8010DC
History: UT2316G-AE3-R | SM6012NSUB | SM4309PSK | IXKH30N60C5 | SI4654DY | FDMC8010DC
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