STP16NF06FP Datasheet and Replacement

STP16NF06STP16NF06FPN-channel 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP16NF06 60V

STP16NF06STP16NF06FPN-channel 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP16NF06 60V

STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V

STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V

STP16NF06STP16NF06FPN-CHANNEL 60V - 0.08 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06 60 V

STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V

STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V

N-Channel MOSFET Transistor STP16NF06ISTP16NF06DESCRIPTIONDrain Current I = 16A@ T =25D CStatic Drain-Source On-Resistance: R = 100m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONShigh packing density for low on-resistancerugged avalanchecharacteristics and less critical

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP16NF06FEATURESTypical R (on)=0.08DSWith low gate drive requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC &DC-CAconvertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25)aSY