STP16NF06LFP
MOSFET. Datasheet pdf. Equivalent
Type Designator: STP16NF06LFP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 7.3
nC
trⓘ - Rise Time: 37
nS
Cossⓘ -
Output Capacitance: 72
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TO-220FP
STP16NF06LFP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP16NF06LFP
Datasheet (PDF)
..1. Size:259K st
stp16nf06lfp.pdf 
STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V
..2. Size:274K st
stp16nf06l stp16nf06lfp.pdf
STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V
4.1. Size:337K st
stp16nf06l.pdf
STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V
4.2. Size:274K st
stp16nf06l-fp.pdf
STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V
5.1. Size:317K st
stp16nf06fp.pdf
STP16NF06STP16NF06FPN-channel 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP16NF06 60V
5.2. Size:367K st
stp16nf06.pdf
STP16NF06STP16NF06FPN-CHANNEL 60V - 0.08 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06 60 V
5.3. Size:323K st
stp16nf06 stp16nf06fp.pdf
STP16NF06STP16NF06FPN-channel 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP16NF06 60V
5.4. Size:229K inchange semiconductor
stp16nf06 istp16nf06.pdf
N-Channel MOSFET Transistor STP16NF06ISTP16NF06DESCRIPTIONDrain Current I = 16A@ T =25D CStatic Drain-Source On-Resistance: R = 100m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONShigh packing density for low on-resistancerugged avalanchecharacteristics and less critical
5.5. Size:206K inchange semiconductor
stp16nf06.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP16NF06FEATURESTypical R (on)=0.08DSWith low gate drive requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC &DC-CAconvertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25)aSY
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