IRFR3412PBF MOSFET. Datasheet pdf. Equivalent

PD - 95498AIRFR3412PbFIRFU3412PbFSMPS MOSFETHEXFET Power MOSFETApplicationsl Switch Mode Power Supply (SMPS) VDSS RDS(on) max IDl Motor Drive100V 0.025 48Al Bridge Convertersl All Zero Voltage Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggedness D-Pak I-Pakl Fully Cha

PD - 94373IRFR3412IRFU3412SMPS MOSFETHEXFET Power MOSFETApplicationsl Switch Mode Power Supply (SMPS) VDSS RDS(on) max IDl Motor Drive100V 0.025 48Al Bridge Convertersl All Zero Voltage SwitchingBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance and D-Pak

PD - 94452IRFR3418 IRFU3418HEXFET Power MOSFETApplicationsVDSS RDS(on) Max IDl High frequency DC-DC converters80V 14m 30ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentIRFR3418 IRFU3418A

PD - 94505IRFR3410 IRFU3410HEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 39m 31ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentIRFR3410 IRFU

PD - 95371AIRFR3411PbFl Advanced Process TechnologyIRFU3411PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt Ratingl 175C Operating TemperatureDl Fast Switching VDSS = 100Vl Fully Avalanche Ratedl Lead-FreeRDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques to

PD - 95516AIRFR3418PbF IRFU3418PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) Max IDl High frequency DC-DC convertersl Lead-Free 14m 30A80VBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Current

PD - 95371BIRFR3411PbFl Advanced Process TechnologyIRFU3411PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt Ratingl 175C Operating TemperatureDl Fast Switching VDSS = 100Vl Fully Avalanche Ratedl Lead-FreeRDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques to

PD - 95514AIRFR3410PbF IRFU3410PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 39m 31Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Cu

PD - 94393IRFR3411IRFU3411 Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 100V 175C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques toachieve extremely low on-

PD - 95514AIRFR3410PbF IRFU3410PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 39m 31Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Cu

IRFR3410N-Channel Enhancement Mode MOSFETDescriptionThe IRFR3410 uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This DSdevice is suitable for use as a GBattery protection or in other Switching application. TO-252-2LGeneral Features V = 100V I = 30A DS DPIN2 D R

IRFR3411PBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, un

IRFR3411TRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

IRFR3410TRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

isc N-Channel MOSFET Transistor IRFR3410, IIRFR3410FEATURESStatic drain-source on-resistance:RDS(on)39mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 1

isc N-Channel MOSFET Transistor IRFR3411, IIRFR3411FEATURESStatic drain-source on-resistance:RDS(on)44mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate