STP270N8F7 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP270N8F7
Marking Code: 270N8F7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 315 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 193 nC
Rise Time (tr): 180 nS
Drain-Source Capacitance (Cd): 2050 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0021 Ohm
Package: TO-220
STP270N8F7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP270N8F7 Datasheet (PDF)
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STH270N8F7-2, STH270N8F7-6, STP270N8F7N-channel 80 V, 0.0017 typ., 180 A, STripFET F7 Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220 packagesDatasheet - production dataTAB FeaturesTABOrder codes VDS RDS(on) max ID2731 STH270N8F7-210.0021 STH270N8F7-6 80 V 180 AH2PAK-2 H2PAK-6STP270N8F7 0.0025 TAB Among the lowest RDS(on) on the market Excellen
stp270n04.pdf
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STB270N04STB270N04-1 - STP270N04N-CHANNEL 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTB270N04-1 40V
stb270n04-1 stb270n04 stp270n04.pdf
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STB270N04STB270N04-1 - STP270N04N-CHANNEL 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTB270N04-1 40V
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STB270N4F3STI270N4F3 - STP270N4F3N-channel 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTB270N4F3 40V
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