STP36NF06FP
MOSFET. Datasheet pdf. Equivalent
Type Designator: STP36NF06FP
Marking Code: P36NF06
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 23
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
TO-220FP
STP36NF06FP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP36NF06FP
Datasheet (PDF)
..1. Size:330K st
stp36nf06 stp36nf06fp.pdf 
STP36NF06STP36NF06FPN-channel 60V - 0.032 - 30A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP36NF06 60V
..2. Size:328K st
stp36nf06fp.pdf
STP36NF06STP36NF06FPN-channel 60V - 0.032 - 30A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP36NF06 60V
5.1. Size:444K st
stp36nf06l stb36nf06l.pdf
STP36NF06LSTB36NF06LN-channel 60V - 0.032 - 30A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP36NF06L 60V
6.1. Size:102K st
stp36nf03l.pdf
STP36NF03LN-CHANNEL 30V - 0.015 - 40A TO-220LOW GATE CHARGE STripFETII POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP36NF03L 30 V
8.1. Size:396K st
stp36n05l.pdf
STP36N05LSTP36N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N05L 50 V
8.2. Size:414K st
stp36n06.pdf
STP36N06STP36N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N06 60 V
8.3. Size:229K st
stp36ne06 stp36ne06fp.pdf
STP36NE06STP36NE06FPN - CHANNEL 60V - 0.032 - 36A - TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP36NE06 60 V
8.4. Size:349K st
stp36ne06.pdf
STP36NE06STP36NE06FPN - CHANNEL 60V - 0.032 - 36A - TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP36NE06 60 V
8.5. Size:401K st
stp36n06l.pdf
STP36N06LSTP36N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N05L 60 V
8.6. Size:112K st
stp36ne06-.pdf
STP36NE06STP36NE06FP N - CHANNEL 60V - 0.032 - 36A - TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP36NE06 60 V
8.7. Size:204K st
stp36n05.pdf
STP36N05LSTP36N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP36N05L 50 V
8.8. Size:415K st
stp36n60m6 stw36n60m6.pdf
STP36N60M6, STW36N60M6N-channel 600 V, 85 m typ., 30 A MDmesh M6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP36N60M6 600 V 99 m 30 A STW36N60M6 33 Reduced switching losses 221 Lower R x area vs previous generation DS(on)1 Low gate input resistance 100% avalanche tested
8.9. Size:759K st
stp36n55m5 stw36n55m5.pdf
STP36N55M5 STW36N55M5N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packagesDatasheet production dataFeaturesVDSS @ RDS(on) Order codes IDTJmax maxTABSTP36N55M5600 V
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