STP40N60M2 Datasheet and Replacement
Type Designator: STP40N60M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13.5 nS
Cossⓘ - Output Capacitance: 117 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
Package: TO-220
STP40N60M2 substitution
STP40N60M2 Datasheet (PDF)
stb40n60m2 stp40n60m2 stw40n60m2.pdf

STB40N60M2, STP40N60M2,STW40N60M2N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID2STB40N60M23132 STP40N60M2 650 V 0.088 34 AD2PAK1STW40N60M2TO-220 Extremely low gate charge Lower RDS(on) x area vs previous
sti40n65m2 stp40n65m2.pdf

STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in IPAK and TO-220 packages Datasheet - production data Features TAB TABOrder code V R max. I DS DS(on) DSTI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 232 1 Excellent output capacitance (COSS) profile 1IPAK TO-220 100% avalanche tested
stp40n03l-20.pdf

STP40N03L-20N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP40N03L-20 30 V
stp40nf10l.pdf

STP40NF10LN-channel 100V - 0.028 - 40A TO-220Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP40NF10L 100V
Datasheet: STP3NA50 , STP3NB100 , STP3NB80 , STP3NB80FP , STP3NK50Z , STP3NK90ZFP , STP400N4F6 , STP40N20 , IRFZ44N , STP40N65M2 , STP40NS15 , STP413D , STP4403 , STP4407 , STP4407A , STP4435 , STP4435A .
History: FDB2532
Keywords - STP40N60M2 MOSFET datasheet
STP40N60M2 cross reference
STP40N60M2 equivalent finder
STP40N60M2 lookup
STP40N60M2 substitution
STP40N60M2 replacement
History: FDB2532



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