All MOSFET. STP4407A Datasheet

 

STP4407A MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP4407A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP-8

 STP4407A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP4407A Datasheet (PDF)

 ..1. Size:821K  stansontech
 stp4407a.pdf

STP4407A STP4407A

STP4407A P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

 7.1. Size:579K  stansontech
 stp4407.pdf

STP4407A STP4407A

STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

 8.1. Size:258K  samhop
 stb440s stp440s.pdf

STP4407A STP4407A

GreenProductSTB/P440SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) MaxVDSS IDHigh power and current handling capability.8 @ VGS=10VTO-220 & TO-263 package.40V 65A11.5 @ VGS=4.5VS TB S E R IE S S TP S E R IE STO-263

 8.2. Size:253K  stansontech
 stp4403.pdf

STP4407A STP4407A

STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and n

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