All MOSFET. IXFH9N80 Datasheet

 

IXFH9N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFH9N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 180 W
   Maximum Drain-Source Voltage |Vds|: 800 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
   Maximum Drain Current |Id|: 9 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 85 nC
   Rise Time (tr): 15 nS
   Drain-Source Capacitance (Cd): 240 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm
   Package: TO247

 IXFH9N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH9N80 Datasheet (PDF)

 ..1. Size:204K  ixys
 ixfh8n80 ixfh9n80.pdf

IXFH9N80 IXFH9N80

Preliminary Data SheetVDSS ID25 RDS(on) trrHiPerFETTMIXFH8N80 800V 8A 1.1 250 nsIXFH9N80 800V 9A 0.9 250 nsPower MOSFETsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilyTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VVGSM Transient 30 V TO-247 SMD*

 9.1. Size:225K  ixys
 ixfh96n20p ixft96n20p ixfv96n20p.pdf

IXFH9N80 IXFH9N80

IXFH 96N20PPolarHTTM HiPerFETVDSS = 200 VIXFT 96N20PID25 = 96 APower MOSFETIXFV 96N20P RDS(on) 24 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 200 VVDGR TJ = 25 C to 150 C; RGS = 1 M 200 V

 9.2. Size:318K  ixys
 ixfh96n15p ixfv96n15p.pdf

IXFH9N80 IXFH9N80

IXFH 96N15P VDSS = 150 VPolarHTTM HiPerFETIXFV 96N15P ID25 = 96 APower MOSFET IXFV 96N15PS RDS(on) 24 m trr 200 nsN-Channel Enhancement ModeAvalanche Energy RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsGD(TAB)SVDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175

 9.3. Size:174K  ixys
 ixfh94n30t ixft94n30t.pdf

IXFH9N80 IXFH9N80

Preliminary Technical InformationTrenchTM HiperFETTM VDSS = 300VIXFT94N30TPower MOSFETs ID25 = 94AIXFH94N30T RDS(on) 36m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M 300 VTO-247 (I

 9.4. Size:191K  ixys
 ixfp90n20x3 ixfq90n20x3 ixfh90n20x3.pdf

IXFH9N80 IXFH9N80

X3-Class HiPerFETTM VDSS = 200VIXFP90N20X3Power MOSFET ID25 = 90AIXFQ90N20X3 RDS(on) 12.8m IXFH90N20X3N-Channel Enhancement ModeAvalanche RatedTO-220AB (IXFP)GDD (Tab)STO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VGVDGR TJ = 25C to 150C, RGS = 1M 200 VDSVGSS Continuous

 9.5. Size:145K  ixys
 ixfh94n30p3 ixfq94n30p3 ixft94n30p3.pdf

IXFH9N80 IXFH9N80

Advance Technical InformationPolar3TM HiperFETTM VDSS = 300VIXFT94N30P3ID25 = 94APower MOSFETsIXFQ94N30P3 RDS(on) 36m IXFH94N30P3N-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGVDGR TJ = 25C to 150C

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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