STP601D Datasheet and Replacement

STP601 / STP601D P Channel Enhancement Mode MOSFET -30A DESCRIPTION STP601/STP601D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP401 has been designed specially to improve the overall efficiency of DC/DC STP601D converters using either synchronous or conventional switching PWM co

STP601 / STP601D P Channel Enhancement Mode MOSFET -30A DESCRIPTION STP601/STP601D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP401 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

STP601Dwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Sy

STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V

STD60N3LH5, STP60N3LH5STU60N3LH5, STU60N3LH5-SN-channel 30 V, 0.0072 , 48 A DPAK, IPAK, Short IPAK, TO-220STripFET V Power MOSFETFeaturesOrder codes VDSS RDS(on) max ID3STD60N3LH5 30 V 0.008 48 A 213STP60N3LH5 30 V 0.0084 48 A 21IPAKTO-220STU60N3LH5 30 V 0.0084 48 ASTU60N3LH5-S 30 V 0.0084 48 A RDS(on) * Qg industry benchmark32 Extr

STP60NE03L-12N - CHANNEL 30V - 0.009 - 60A - T0-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE03L-12 30 V

STP60NS04ZBN-CHANNEL CLAMPED 10m - 60ATO-220FULLY PROTECTED MESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP60NS04ZB CLAMPED

STP60NH2LLN-channel 24V - 0.010 - 40A TO-220STripFET Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP60NH2LL 24V

STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

STP60NE06L-16STP60NE06L-16FPN - CHANNEL 60V - 0.014 - 60A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06L-16 60 V

STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

STP60NF06N-channel 60V - 0.014 - 60A TO-220STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP60NF06 60V

STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V

STP60NS04ZN-CHANNEL CLAMPED 10m - 60A TO-220FULLY PROTECTED MESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP60NS04Z CLAMPED

STD60N3LH5STP60N3LH5, STU60N3LH5N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, TO-220STripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTD60N3LH5 30 V 0.008 48 A 32STP60N3LH5 30 V 0.0084 48 A1STU60N3LH5 30 V 0.0084 48 ATO-220 RDS(on) * Qg industry benchmark3 Extremely low on-resistance RDS(on) 3211 Very low switching gate charge

STP60NE03L-10N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE03L-10 30 V

STP60NE06-16STP60NE06-16FPN-CHANNEL 60V - 0.013 - 60A TO-220/TO-220FP"SINGLE FEATURE SIZE" POWER MOSFETTable 1. General Features Figure 1. PackageType VDSS RDS(on) IDSTP60NE06-16 60 V

STP60NE06-16STP60NE06-16FPN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06-16 60 V

STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

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STP60NE06L-16 N - CHANNEL 60V - 0.014 - 60A - D2PAKSINGLE FEATURE SIZE POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP60NE06L-16 60 V

STP60NE10STP60NE10FPN - CHANNEL 100V - 0.016 - 60A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE10 100 V

STP60NF03LN-channel 30V - 0.008 - 60A TO-220STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP60NF03L 30V

STP60NE03L-12N - CHANNEL 30V - 0.009 - 60A - TO-220 STripFET " POWER MOSFET PRELIMINARY DATATYPE VDSS RDS(on) IDSTP60NE03L-12 30 V

STP60NF06FPN-channel 60V - 0.014 - 30A TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP60NF06FP 60V

STP60NE06L-16STP60NE06L-16FPN - CHANNEL 60V - 0.014 - 60A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06L-16 60 V

STP60NE06-16STP60NE06-16FPN - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06-16 60 V

STB60N55F3, STD60N55F3, STF60N55F3STI60N55F3, STP60N55F3, STU60N55F3N-channel 55 V, 6.5 m, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220TO-220FP STripFET III Power MOSFETFeaturesType VDSS RDS(on) ID Pw332131STB60N55F3 55V

STB60NF10STB60NF10-1 - STP60NF10N-channel 100V - 0.019 - 80A - TO-220 - D2PAK - I2PAKSTripFET II Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)3312STB60NF10 100V

GrPPrPPSTP60L60FSamHop Microelectronics Corp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.60V 32A 15 @ VGS=10VTO-220F Package.DGG D SSTF SERIESTO-220FS(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Parameter

GrPPrPPSTB/P60L60AaS mHop Microelectronics C orp.Ver 3.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).VDSS ID RDS(ON) (m) TypHigh power and current handling capability.60V 65A 15 @ VGS=10VTO-220 & TO-263 package.DGSTB SERIESSTP SERIESTO-263(DD-PAK)TO-220S

GreenProductSTB/P60L60aS mHop Microelectronics C orp.Ver 2.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) TypVDSS IDHigh power and current handling capability.60V 50A 21 @ VGS=10VTO-220 & TO-263 package.DGS TB S E R IE SS TP S E R IE STO-263(DD-PAK)

STP607D P Channel Enhancement Mode MOSFET -10.0A DESCRIPTION STP607D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP607D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been

STP605D P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION STP605D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP607D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been

STP60NF06FPwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.010 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50TO-220 FULLPAKDGSD SGTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Para

STP60N3LH5www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 30 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0075 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0095ID (A) 70Configuration SinglePackage TO-220AB/ TO-263TO-220AB DTO-263GSG D SN-Channel MOSFETG D STop View

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP60NF06LFEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

INCHANGE Semiconductorisc N-Channel Mosfet Transistor STP60NF10FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching mode power suppliesGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)

isc N-Channel MOSFET Transistor STP60NE06-16FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP60N06-14FEATURESWith low gate drive requirementsEasy to driveHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP60NF06FPFEATURESTypical R (on)=0.08DSWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =