All MOSFET. STP60NE06L-16 Datasheet

 

STP60NE06L-16 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP60NE06L-16
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 155 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-220

 STP60NE06L-16 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP60NE06L-16 Datasheet (PDF)

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 stp60ne06l-16 stp60ne06l-16fp.pdf

STP60NE06L-16 STP60NE06L-16

STP60NE06L-16STP60NE06L-16FPN - CHANNEL 60V - 0.014 - 60A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06L-16 60 V

 0.1. Size:353K  st
 stp60ne06l-16-fp.pdf

STP60NE06L-16 STP60NE06L-16

STP60NE06L-16STP60NE06L-16FPN - CHANNEL 60V - 0.014 - 60A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06L-16 60 V

 3.1. Size:37K  st
 stp60ne06l-.pdf

STP60NE06L-16 STP60NE06L-16

STP60NE06L-16 N - CHANNEL 60V - 0.014 - 60A - D2PAKSINGLE FEATURE SIZE POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP60NE06L-16 60 V

 5.1. Size:283K  st
 stp60ne06-16 stp60ne06-16fp.pdf

STP60NE06L-16 STP60NE06L-16

STP60NE06-16STP60NE06-16FPN-CHANNEL 60V - 0.013 - 60A TO-220/TO-220FP"SINGLE FEATURE SIZE" POWER MOSFETTable 1. General Features Figure 1. PackageType VDSS RDS(on) IDSTP60NE06-16 60 V

 5.2. Size:397K  st
 stp60ne06-16.pdf

STP60NE06L-16 STP60NE06L-16

STP60NE06-16STP60NE06-16FPN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06-16 60 V

 5.3. Size:120K  st
 stp60ne06.pdf

STP60NE06L-16 STP60NE06L-16

STP60NE06-16STP60NE06-16FPN - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06-16 60 V

 5.4. Size:259K  inchange semiconductor
 stp60ne06-16.pdf

STP60NE06L-16 STP60NE06L-16

isc N-Channel MOSFET Transistor STP60NE06-16FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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