STP6506 Datasheet and Replacement

STP6506 Dual P Channel Enhancement Mode MOSFET -2.8ADESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low

STD65NF06STP65NF06N-channel 60V - 11.5m - 60A - DPAK/TO-220STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD65NF06 60V

GrerrPPrPrProSTP652FaS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) TypVDSS IDHigh power and current handling capability.60V 29A 22 @ VGS=10VTO-220F package.DGG D SSTF SERIESSTO-220F(TC=25C unless ot

GrPPrPPSTP656FSamHop Microelectronics Corp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m ) MaxRugged and reliable.19 @ VGS=10VTO-220F Package.60V 22A29 @ VGS=4.5VDGG D SSTF SERIESTO-220FS(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSym

STP65NF06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limi

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP65NF06FEATURESWith TO-220 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET