STP6635GH Specs and Replacement

Type Designator: STP6635GH

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 169 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-251 TO-252

STP6635GH substitution

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STP6635GH datasheet

 ..1. Size:497K  stansontech
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STP6635GH

STP6635GH P Channel Enhancement Mode MOSFET -40.0A DESCRIPTION STP6635GH is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has b... See More ⇒

 ..2. Size:891K  cn vbsemi
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STP6635GH

STP6635GH www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET A... See More ⇒

 9.1. Size:807K  stansontech
 stp6625.pdf pdf_icon

STP6635GH

STP6625 P Channel Enhancement Mode MOSFET -5.0A SCRIPTION STP6625 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ... See More ⇒

 9.2. Size:449K  stansontech
 stp6623.pdf pdf_icon

STP6635GH

STP6623 P Channel Enhancement Mode MOSFET -18.0A SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane... See More ⇒

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Detailed specifications: STP60NE06L-16, STP60NE06L-16FP, STP60NF06LFP, STP60NH2LL, STP6308, STP6506, STP6621, STP6623, AO4407, STP6N60M2, STP6N65M2, STP6N80K5, STP6NB90, STP6NC60, STP6NK60ZFP, STP6NK70Z, STP6NK90ZFP

Keywords - STP6635GH MOSFET specs

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